TSM2N7000KCT A3G

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	400mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7.32pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	0.4nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	5 Ohm @ 100mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	300mA (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Box (TB)

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Introduction to TSM2N7000KCT A3G

The TSM2N7000KCT A3G (Transistors - FETs, MOSFETs - Single) is a highly efficient, low-voltage N-channel Metal Oxide Semiconductor Field Effect Transistor, or MOSFET, designed for use in a variety of applications. It is capable of dissipating up to 9.9 watts of power and operates at a maximum voltage of 60 volts. It has a fast switching speed and can handle higher current flow than many other MOSFETs. Additionally, it is designed to be easily installed into any circuit without any additional modifications.

Application Fields of TSM2N7000KCT A3G

The TSM2N7000KCT A3G MOSFET is a versatile component that can be used in a variety of applications. It is commonly used for low power consumption and commutation tasks in automotive, military or industrial applications. It can be used for a range of applications, such as load switching, power converters, and servo motor controllers. It is frequently used to limit the power of automobile engines, in the form of a fuel pump or boost control system. Additionally, it is a popular choice for the production of compact power converters, as it can handle high current levels while taking up a fraction of the space occupied by conventional transistors.

Input & Output Characteristics of TSM2N7000KCT A3G

The TSM2N7000KCT A3G MOSFET has an input signal which is used to turn the transistor on and off and an output signal, which presents a voltage related to the input signal. The input signals used to control the device are typically logic level signals, i.e., 0 to 5V, but can also be driven by a wide variety of analog devices, such as Thermostats and PIR sensors. The devices ability to take in a wide range of input signals is one of the main features that make it so versatile.The output characteristics of the devices are largely characterized by the voltage across the drain and source terminals. For example, when the input signal is 0V, the voltage across the drain and source is 0V, making it an ideal choice for low power applications. When the input signal is 5V, the voltage on the drain and source can reach up to 60V, making it capable of handling much higher power requirements than other MOSFETs.

Working Principles of TSM2N7000KCT A3G

The working principle of the TSM2N7000KCT A3G is based on the behavior of the properties of field-effect transistors. The transistor features three layers of semiconductor materials, two of which contain dopants. This creates a channel between the layers, and the current flows between them in response to the voltage at the gate terminal. The main idea of the transistor is that the resistance of the channel can be controlled with a voltage on the gate terminal. A voltage that is higher than the source voltage will turn the transistor on and allow current to flow, while pairing it with a low voltage will switch it off and prevent the current. The transistor manufacturers have optimized the design of the transistor to have a low voltage and fast switching times, enabling it to be used in a variety of applications.

Conclusion

The TSM2N7000KCT A3G is an efficient and versatile MOSFET powered by a low voltage. It has been designed to handle up to 9.9 watts of power and has a fast switching speed. Applications for which this device is commonly used include load switching, power converters and servo motor controllers, automobiles engines, and production of compact power converters, among others. The working principle of the device works by adjusting the resistance of a channel between two layers of semiconductor materials with the voltage at the gate terminal. This makes it an ideal choice for a variety of applications that require fast and reliable current flow.

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