BUK765R0-100E,118 Discrete Semiconductor Products

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The BUK765R0-100E is an N-channel Enhancement Mode Field Effect Transistor (FET), often referred to as a MOSFET.

It is a single FET, meaning that it consists of only one FET device. This is in contrast to dual and multi-FETs where two or more FETs are combined on a single chip to provide a range of different functions.

A FET is a three-terminal device consisting of a source terminal, a gate terminal, and a drain terminal. There are two types of FETs: enhancement-mode FETs and depletion-mode FETs. An enhancement-mode FET, such as the BUK765R0-100E, must be activated to turn on, unlike a depletion-mode FET which can be switched on without the application of a positive voltage to its gate. This makes the enhancement-mode FET the more common choice for uses where low power consumption is important.

The BUK765R0-100E has a drain-source voltage rating of 100 volts and a continuous drain current rating of 5.4 amperes. It is capable of operating at frequencies up to 5.4 MHz, and it has a maximum power dissipation of 11 watts. It comes in a TO-220 package with a high voltage Si substrate.

The main application fields of the BUK765R0-100E are motor control, power conversion, DC/DC converters, logic control, and high-frequency switching. It is designed to cope with the needs of high-power applications that require a low power drain and high switching speed. It is also suitable for a range of audio-frequency applications due to its high frequency response and low power drain characteristics.

The working principle of the BUK765R0-100E is similar to that of other FET devices. When a positive voltage is applied to the gate terminal, holes move from the source to the drain, and this allows current to flow from the source to the drain. This current flow is controlled by the magnitude of the voltage applied to the gate terminal, allowing for precision control of the drain current.

The device can be used to switch currents in both AC and DC circuits, as it is not affected by the polarity of the applied voltage. This makes it a versatile device for a variety of applications. It also features a low output capacitance and a low gate charge, which makes it suitable for use in high-frequency switching applications.

In conclusion, the BUK765R0-100E is a single enhancement-mode FET that is designed for high-power applications requiring low power drain and high switching speed. It is capable of operating at frequencies up to 5.4 MHz and is suitable for a range of audio-frequency applications due to its high frequency response and low power drain characteristics. Its main application fields are motor control, power conversion, DC/DC converters, logic control, and high-frequency switching.

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