Allicdata Part #: | 296-25644-2-ND |
Manufacturer Part#: |
CSD16322Q5C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 25V 97A 8SON |
More Detail: | N-Channel 25V 21A (Ta), 97A (Tc) 3.1W (Ta) Surface... |
DataSheet: | CSD16322Q5C Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-SON |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1365pF @ 12.5V |
Vgs (Max): | +10V, -8V |
Gate Charge (Qg) (Max) @ Vgs: | 9.7nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 20A, 8V |
Drive Voltage (Max Rds On, Min Rds On): | 3V, 8V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Ta), 97A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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:TheCSD16322Q5C is a n-channel enhancement-mode power MOSFET. The product ratingis 55V, which makes it well served in applications that require a highvoltage supply. It is widely used for power conversion and EMI/ESDsolutions. Its features include low on-state resistance, high avalanche endurance,low threshold voltage, and low capacitance.
TheCSD16322Q5C can be used in a variety of applications, including power supplies,motor control, audio systems, LED lighting, and telecommunications. Inaddition, it can also be used for switching operations, hot swap, andprotected loads. Its wide range of applications makes it very versatile andflexible.
Theworking principle of the CSD16322Q5C is based on the MOSFET (Metal-Oxide-Semiconductor Field-EffectTransistor). MOSFETs are three-terminal devices, with a gate, source, anddrain. The gate controls the flow of current between the source and drain. Applying a positive voltage to the gate causes the MOSFET to turn on, creatinga channel between the source and drain, allowing current to flow. Applying avoltage to the gate causes the MOSFET to turn off, preventing current flow.When the gate voltage is exactly zero, the device is in its "Off"state, with no current flow between the source and drain.
TheQ5C rating of the CSD16322Q5C is based on heat dissipation, voltage, andcurrent limits. It is temperature-dependent, and when the ambient operatingtemperature is below its rated temperature, the device is more efficient. TheQ5C rating also determines the maximum allowable voltage across the device\'selectrodes. This voltage defines the breakdown voltage or drain-to-sourcebreakdown voltage, which is the maximum current the device can sustain.
TheCSD16322Q5C is a very reliable component, with low on-state resistance and ahigh avalanche endurance. It has a low threshold voltage, which ensures anefficient power conversion. Additionally, its capacitance is also very low tominimize EMI/ESD. This component is an excellent choice for a variety ofapplications, such as power conversion, motor control, and LED lighting.
The specific data is subject to PDF, and the above content is for reference
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