IXTP200N085T

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IXTP200N085T is a single N-channel enhancement type vertical double diffused MOSFET, also known as VMOS, which has been widely used in circuit switching, power conversion and other electronic control and power amplification fields due to its excellent performance. In this article, we will introduce this transistor\'s application field and working principle.

Application Field of IXTP200N085T

IXTP200N085T is mainly used in circuit switching applications. It can be used as a high frequency bridge switch, power amplifier, switch power supply circuit and DC/DC converter. It can also provide better performance in other fields such as motor control, LCD backlight control, clock and data driver and power module conversion.

In addition, IXTP200N085T can be applied in other fields such as communication equipment, power instruments, intelligent controllers, and various power electronic devices because of its switching performance, low ON resistance and low input capacitance.

Working Principle of IXTP200N085T

IXTP200N085T is an enhancement type MOSFET. Under the absence of an external electric field, the positive voltage on the gate does not cause any current to flow through the channels of the MOSFET, but it will increase the thickness of the depletion region to form an inversion layer between the bulk and the gate. The inversion layer will be induced by the electric field by taking away the charges, that’s why the MOSFET can be switched on and realize the conduction of the source and the drain.

The IXTP200N085T has a vertical double diffused structure, which means there are two layers of heavily doped regions between the drift region and the junction gate that separates the P and N regions. This structure can make the output capability higher than the planar type, so that IXTP200N085T can handle high current, up to 200 A.

IXTP200N085T has a breakdown voltage of 1.5KV and a critical rate of rise of junction temperature of 100K/W, which is lower than that of the planar type. Hence, if the MOSFET is used in power control systems, it is able to provide better control of heat and strong anti-interference capability.

Conclusion

IXTP200N085T is a single N-channel enhancement type vertical double diffused MOSFET. It can be used in many different fields such as circuit switching, power conversion, motor control, LCD backlight control and it has excellent performance in these fields due to its low ON resistance and low input capacitance. The transistor’s working principle is based on the inversion layer formed between the bulk and the gate once an external electric field is applied, which enables it to be switched on.

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