IXTQ200N06P

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IXTQ200N06P transistors are part of a range of enhancement mode, vertical channel, n-channel Field-Effect Transistors (FETs) produced by IXYS Corporation. These are standard FETs also known as Metal Oxide Semiconductor Field Effects Transistors (MOSFETs) able to operate at temperatures up to 175°C. In addition to Withstanding extended high temperatures, these transistors also exhibit high switching speeds and low on-state leakage current. The series makes use of IXYS’ proprietary cell design and the IXSI® trench MOSFET technology, based on the company’s planar process. The IXTQ200N06P is especially suited for high-voltage switching applications.

The IXTQ200N06P is a single-channel device with a breakdown voltage of 200V, an RDS(on) at 10V of 6mΩ, min., and an operating drain current of 10A, max. The device is suitable for applications requiring high power switching, such as motor drivers, power management, server and telecom applications, and lightning regulating circuits. Other features of the IXTQ200N06P include an Avalanche energy rating of 2.5mJ, max., a cooling surface area of 8mm², a thermal impedance of 2.8K/W, an operating temperature range from -55°C to 175°C, and a gate threshold voltage of 2.5V, max. The transistor also has a maximum body diode dV/dt of 500V/ns and a maximum gate resistance of 1000Ω.

The working principle of this FET is based on the principle of controlling current flow by exploiting a controlled electrical field. The IXTQ200N06P provides a highly effective way to control current flow using a voltage measurement. The transistor contains a gate, which is used to control the flow of current between the source and the drain. The gate is held at either 0 volts or at ground level and the voltage applied between the gate and the source is used to control the flow of current between source and drain. The higher the applied voltage, the more current that will flow. The IXTQ200N06P also contains an internal body diode, which allows current to flow in the reverse direction when the gate is at 0 volts.

The IXTQ200N06P is known for its high-performance characteristics, reliability, durability, and cost-effectiveness. Its high breakdown voltage and low on-state leakage current make it suitable for high-voltage switching applications. Additionally, its Avalanche energy rating and its maximum gate resistance of 1000Ω make it well-suited for powering motor drivers, power management, server and telecom applications, and regulating circuits. Its ability to withstand extended high temperatures and its maximum body diode dV/dt of 500V/ns make it a dependable choice for industrial and consumer applications.

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