SIR802DP-T1-GE3

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SIR802DP-T1-GE3 is an integrated circuit device of Power MOSFET type, manufactured by Gennum Corporation which is composed of a single n-type field effect transistor. This device is ideal for switching applications featuring fast switching times and low on-state resistance. This is designed to provide low gate drive power dissipation. This device utilizes a low on-state conduction resistance, making it suitable for a wide range of applications including lighting, power supplies, speed controls and many other power switching applications.

The device has a maximum drain current of 12 A and a 700 V drain-source breakdown voltage. It has a gate threshold voltage of 6 V and a gate source voltage of ±10 V. The maximum junction-ambient is 175°C and the maximum power dissipation is 40 W. The maximum junction-source voltage is 740 V. The gate-drain capacitance is 8 pF. The gate-source capacitance is 19 pF. This device is provided in an SO-8 package.

SIR802DP-T1-GE3 is a single-channel MOSFET device, meaning it operates as a single bipolar transistor, but with a higher on-state resistance. The device utilizes a gate to control the transistor’s current through the channel. A small voltage sent to the gate will turn the device on or off, depending on the voltage level applied to the gate. This type of transistor is also known as an insulated gate structure.

This MOSFET device is used to regulate direct current (DC) circuits, creating an efficient load switch that can be used to turn devices on and off without any pesky cross-conduction. Such devices are often used in switching power supplies, personal computers and other digital circuitry that require fast response time. Furthermore, they are frequently used in displays and digital logic sets, where their fast switching ability results in minimal power dissipation. Its fairly low on-state resistance helps save energy and reduce heat produced during the switching operation.

In terms of operating temperature, SIR802DP-T1-GE3 is a temperature compensated device. It was designed with a high degree of voltage and temperature optimization for power applications, allowing for better functionality and reliability. As the temperature increases, the switching off threshold and on-state resistance of the device slowly decreases.

This temperature compensation feature increases the device’s efficiency, as it can provide a more consistent performance and maintain the desired level of device performance. This is important in semiconductor devices, as changing temperatures can cause a deterioration in device performance and output. Moreover, their wide range of operating temperature helps to increase their reliability and performance in switching power applications.

In general, SIR802DP-T1-GE3 is a useful and efficient power MOSFET device that can be used in a wide range of switching applications. Its temperature compensation feature helps to protect the device from extreme temperatures, allowing for a better performance and reliability. Furthermore, its low on-state resistance helps to reduce power dissipation, making them a great choice for low power and high speed switching applications.

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