IXTQ200N085T

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IXTQ200N085T is a type of field-effect transistor (FET), specifically a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a type of single FET from Vishay designed for use in power management and switching applications. The device has an N-channel MOSFET, meaning that there is a “closed” channel of electrons between the source and drain terminals when a voltage is applied to the gate terminal. The IXTQ200N085T has an integrated gate-source voltage or VGS of -8 V to -20 V, and a drain current or ID rating of 200 mA.

The IXTQ200N085T is used in several applications where fast switching times, high efficiency, and low power requirements are important. Such applications include voltage regulator modules, digital switching, power converters, and RF amplifiers. These devices can also be found in power supply circuits, motor drive circuits, and switching regulators.

The working principle of the IXTQ200N085T is based on the MOSFET-type field effect transistor. This type of transistor has two conductive terminals, the gate and the drain, and a thin layer of insulating material separating them. When a voltage is applied to the gate, an electric field is created, which induces a sufficient electric charge on the insulating layer to allow current to pass through the transistor. The speed at which the current is allowed to pass is determined by the voltage supplied to the gate.

The IXTQ200N085T has a low on-resistance of 2 ohms, making it suitable for high power switching applications. It also has a low input capacitance, allowing fast switching times. These features, combined with a wide operating temperature range of -55°C to 150°C, make the IXTQ200N085T ideal for use in highly reliable systems where high switching speeds and temperatures are required.

In summary, the IXTQ200N085T is a single, N-channel MOSFET designed for fast switching and power management applications. Its integrated gate-source voltage range, low on-resistance, low input capacitance, and wide operating temperature range make it suitable for use in a variety of power management and switching devices. This device is highly reliable and can handle high current and operating temperatures, making it one of the most popular FETs currently being used in the market.

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