DMN67D8L-7

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The DMN67D8L-7 is a single N-channel transistor with an exceptionally low RDS(ON). The device provides high efficiency in a wide variety of applications which makes it a preferred choice of experienced engineers.

The DMN67D8L-7 features an innovative Dual Pin Gate design that minimizes the number of components and thus increases power efficiency. It also has a "folded" channel structure that offers excellent drain-source breakdown voltage and fast switching times. The DMN67D8L-7 is available in a range of packages, making it the perfect choice for space-constrained application designs.

The DMN67D8L-7 is a mosfet device which utilizes a high-k dielectric material and is operated in depletion mode. It offers low on-resistance and was designed to provide low RDS(on) values for high-current applications. It has a particularly low gate-charge rating, so it is capable of fast switching, making it an ideal choice for high-frequency applications.

The working principle of the DMN67D8L-7 transistor is based on a P-type channel, which is the source of the transistor. The source is connected to the substrate and provides the majority carriers of the operating current. The drain is the other terminal of the device and it is where the majority carriers of the operating current flow to.

The current flow through the transistor is controlled by a gate voltage. When the gate voltage is increased, current flows freely through the device. As the gate voltage is decreased, the current flow is reduced, creating a source-gate voltage drop. This creates a voltage dependant conduction resistance which is commonly referred to as rds or RDS(ON).

The DMN67D8L-7 is applicable across a wide range of applications. It has been used in high-power switching, motor control, battery management, high-efficiency motor drives, and many other power applications. The low on-resistance allows for efficient and reliable current conduction, making it suitable for high-performance applications.

In summary, the DMN67D8L-7 is a single N-Channel mosfet transistor with an exceptionally low RDS(ON). It features an innovative Dual Pin Gate design and a “folded” channel structure that offers excellent drain-source breakdown voltage and fast switching times. The working principle of the device is based on a P-type channel and is controlled by an applied gate voltage. It is a preferred choice for experienced engineers and is applicable across a wide range of applications, including high-power switching, motor control, battery management, and high-efficiency motor drives.

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