DMP32D9UFZ-7B Allicdata Electronics
Allicdata Part #:

DMP32D9UFZ-7BDITR-ND

Manufacturer Part#:

DMP32D9UFZ-7B

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 30V 0.2A X2-DFN0606
More Detail: P-Channel 30V 200mA (Ta) 390mW (Ta) Surface Mount ...
DataSheet: DMP32D9UFZ-7B datasheetDMP32D9UFZ-7B Datasheet/PDF
Quantity: 1000
1 +: $ 0.07000
10 +: $ 0.06790
100 +: $ 0.06650
1000 +: $ 0.06510
10000 +: $ 0.06300
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 3-XFDFN
Supplier Device Package: X2-DFN0606-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 390mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 22.5pF @ 15V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMP32D9UFZ-7B is a Single N-Channel Enhancement Mode MOSFET provided by Diodes Incorporated, a manufacturer of semiconductor devices. It is a high performance field effect transistor that performs as a voltage-controlled switch. This transistor is mainly used in applications such as switching circuits, converters and drivers for operating motors, as well as for amplification, rectification and signal processing. It is also suitable for a variety of applications in computer and communication systems.

The DMP32D9UFZ-7B can be operated in either enhancement or depletion mode. In enhancement mode, the channel is in the off state and current does not flow until the gate voltage is increased. In depletion mode, the channel is in the on state and current flows until the gate voltage is decreased. Its maximum drain and gate voltage is -20 V and 20 V, respectively.

The DMP32D9UFZ-7B is made up of two main parts: a gate and a drain. The gate is a metal-oxide-semiconductor (MOSFET) gate and the drain is a semiconductor, usually silicon, that can either be heavily doped (p-type, with positive charges) or lightly doped (n-type, with negative charges). This combination allows the transistor to be operated in either enhancement or depletion mode. In both modes, a voltage is applied to the gate to activate or deactivate the channel.

The DMP32D9UFZ-7B is a very versatile FET, with excellent switching and RDS(ON). It offers low threshold voltage, fast switching time, high current gain, and good thermal resistance. It is highly stable, with a very low leakage current, and can be used in a variety of circuits in both enhancement and depletion mode. It is a great choice for those looking for a fast, reliable and economical semiconductor device.

The DMP32D9UFZ-7B is mainly used in applications such as switching circuits, converters, amplifiers, motor drivers, rectifiers and signal processing. It can be used in a variety of circuits, including low-power and high-voltage circuits, power converters, logic circuits, and many others. It is suitable for a wide range of applications, and its combinations of low threshold voltage and fast switching time make it an excellent choice for a wide range of circuits.

In conclusion, the DMP32D9UFZ-7B is a high performance field effect transistor that is suitable for a variety of applications in computer and communication systems. Its low threshold voltage, fast switching time and high current gain make it an excellent choice for switching circuits, converters, amplifiers, motor drivers, rectifiers, logic circuits, and many other applications. It is a very versatile FET with excellent switching and RDS(ON), making it a great choice for those looking for a fast, reliable and economical semiconductor device.

The specific data is subject to PDF, and the above content is for reference

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