Allicdata Part #: | PSMN006-20K,518-ND |
Manufacturer Part#: |
PSMN006-20K,518 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 20V 32A 8-SOIC |
More Detail: | N-Channel 20V 32A (Tc) 8.3W (Tc) Surface Mount 8-S... |
DataSheet: | PSMN006-20K,518 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 700mV @ 1mA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 8.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4350pF @ 20V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 2.5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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PSMN006-20K,518 Application Field and Working Principle
PSMN006-20K,518 is a kind of power MOSFET, which belongs to N-Channel enhancement type. It is used as a switch in high-voltage and high-current applications. This power MOSFET can be used in applications such as high power switching, high-frequency switching, high-voltage power supply and DC-DC converter.
This power MOSFET is usually formed into packages such as TO-220, TO-220-3L, TO-220-5L and TO-220-7L, which have different shapes and different pins. The TO-220 has three leads with a G, D, and S pin configuration. The TO-220-3L has three leads with a G, Gate and S pin configuration. The TO-220-5L has five leads with a G, D, Gate, S, and S2 pin configuration. The TO-220-7L has seven leads with a G, D, Gate, Gate, S, S2 and S3 pin configuration.
In industry applications the PSMN006-20K,518 can be used for voltage and current regulation, motor drives, and for increasing energy efficiency of the current used in the system. It can be used for fluctuations in AC input, DC input and 3 phase input.
The working principle of the PSMN006-20K,518 is based on the MOSFET Amplification principle. The MOSFET works on the principle of voltage control, which means that when there is a potential difference between the Gate and the Source the MOSFET will turn ON and the current will flow.
The PSMN006-20K,518 has a Drain-Source on resistance of 540 mΩ (at Vds=30V,ID=20A) and a threshold voltage of 1.5 V (at Vg=-20V). The maximum drain current is 20A, which ensures that the current flow is controlled effectively. It also has a drain-source breakdown voltage of 50 V, a gate to source threshold voltage of -3V and a maximum power dissipation of 87 W.
The PSMN006-20K,518 is a high-voltage, high current power MOSFET, which is used in a variety of applications such as motor drives, voltage and current regulation and energy efficiency. The working principle is based on the MOSFET Amplification principle and the device is extremely reliable for high power and high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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