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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IPI030N10N3GXKS A1-ND	IPI030N10N3GXKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 275A Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	500+: $2.2122
IRFSL7730PBF-ND	IRFSL7730PBF	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250A Gate Charge (Qg) (Max) @ Vgs: 407nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 13660pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	55 Order	1+: $2.2365 10+: $1.999
IPD60R600P7SAUM A1TR-ND	IPD60R600P7SAUM A1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 4V @ 80A Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 400V Power Dissipation (Max): 30W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.2249
IPB034N03LGATMA 1TR-ND	IPB034N03LGATMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 15V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.5284
BSC030P03NS3GAU MA1TR-ND	BSC030P03NS3GAU MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 25.4A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.1V @ 345A Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 15V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.6982
BSC190N12NS3GAT MA1TR-ND	BSC190N12NS3GAT MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25C: 8.6A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 19 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 4V @ 42A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 60V Power Dissipation (Max): 69W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.449
IPD180N10N3GATM A1TR-ND	IPD180N10N3GATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 3.5V @ 33A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Power Dissipation (Max): 71W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.317
IRL7486MTRPBFTR -ND	IRL7486MTRPBF	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 209A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 123A, 10V Vgs(th) (Max) @ Id: 2.5V @ 150A Gate Charge (Qg) (Max) @ Vgs: 111nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6904pF @ 25V Power Dissipation (Max): 104W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DirectFET Isometric ME Package / Case: DirectFET Isometric ME	1000 Order	--
IPP65R110CFDXKS A1-ND	IPP65R110CFDXKS A1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V Power Dissipation (Max): 277.8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $4.3533 10+: $3.889 100+: $3.1888 500+: $2.5821 1000+: $2.1777
IPP60R120P7XKSA 1-ND	IPP60R120P7XKSA 1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120 mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 4V @ 410A Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1544pF @ 400V Power Dissipation (Max): 95W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	1000 Order	1+: $2.6523 10+: $2.3701 100+: $1.9433 500+: $1.5736 1000+: $1.3271
IRF520N-ND	IRF520N	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Power Dissipation (Max): 48W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
IRFB41N15D-ND	IRFB41N15D	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
IRLZ34NL-ND	IRLZ34NL	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
IRFSL41N15D-ND	IRFSL41N15D	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
IRFR220NTRL-ND	IRFR220NTRL	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Power Dissipation (Max): 43W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IPU06N03LAGXK-N D	IPU06N03LAGXK	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 40A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
64-9144TR-ND	64-9144	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 14A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.1 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.35V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET ST Package / Case: DirectFET Isometric ST	1000 Order	1+: $0
IRFR4104TRL-ND	IRFR4104TRL	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 42A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRF2807ZSPBF-ND	IRF2807ZSPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3270pF @ 25V Power Dissipation (Max): 170W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRF3205ZSTRRPBF -ND	IRF3205ZSTRRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V Power Dissipation (Max): 170W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IPP04N03LBG-ND	IPP04N03LB G	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 2V @ 70A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5203pF @ 15V Power Dissipation (Max): 107W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	1+: $0
IPP12CN10NG-ND	IPP12CN10N G	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V Vgs(th) (Max) @ Id: 4V @ 83A Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
SPD14N06S2-80-N D	SPD14N06S2-80	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 14A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
BSS123L6327HTSA 1TR-ND	BSS123L6327HTSA 1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 50A Gate Charge (Qg) (Max) @ Vgs: 2.67nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 69pF @ 25V Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
IRFU2307ZPBF-ND	IRFU2307ZPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 4V @ 100A Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
IPU78CN10NG-ND	IPU78CN10N G	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 78 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 4V @ 12A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 716pF @ 50V Power Dissipation (Max): 31W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
IRFB3004GPBF-ND	IRFB3004GPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V Power Dissipation (Max): 380W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
IRF7799L2TR1PBF TR-ND	IRF7799L2TR1PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 375A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 38 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 6714pF @ 25V Power Dissipation (Max): 4.3W (Ta), 125W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET Isometric L8	1000 Order	1+: $0
IPD90N06S404ATM A1TR-ND	IPD90N06S404ATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 90A Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IPI120N06S402AK SA1-ND	IPI120N06S402AK SA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 140A Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V Power Dissipation (Max): 188W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
IRF9204PBF-ND	IRF9204PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 56A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 3V @ 100A Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7676pF @ 25V Power Dissipation (Max): 143W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
IRFH7184TRPBF-N D	IRFH7184TRPBF	Infineon Technologies	View more Series: FASTIRFET, HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 20A (Ta), 128A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.6V @ 150A Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 50V Power Dissipation (Max): 3.9W (Ta), 156W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	1000 Order	--
IPC95R750P7X7SA 1-ND	IPC95R750P7X7SA 1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	1+: $0
IRFZ44ZSPBF-ND	IRFZ44ZSPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V Power Dissipation (Max): 80W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	2043 Order	1+: $1.2096 10+: $1.0918 100+: $0.8771 500+: $0.6822 1000+: $0.5653
IRFI540NPBF-ND	IRFI540NPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 52 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power Dissipation (Max): 54W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	2635 Order	--
IRL60B216-ND	IRL60B216	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 258nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 15570pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	879 Order	--
AUIRFZ34N-ND	AUIRFZ34N	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Power Dissipation (Max): 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1000+: $0.5497
AUIRF1010Z-ND	AUIRF1010Z	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
IRFP3206PBF-ND	IRFP3206PBF	Infineon Technologies	View more Series: HEXFET Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 150A Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 50V Power Dissipation (Max): 280W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	10555 Order	--
IPB200N25N3GATM A1TR-ND	IPB200N25N3GATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 64A, 10V Vgs(th) (Max) @ Id: 4V @ 270A Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7100pF @ 100V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	4000 Order	--

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