Allicdata Part #: | IPD90N06S404ATMA1TR-ND |
Manufacturer Part#: |
IPD90N06S404ATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 90A TO252-3 |
More Detail: | N-Channel 60V 90A (Tc) 150W (Tc) Surface Mount PG-... |
DataSheet: | IPD90N06S404ATMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 90µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 128nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 90A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The IPD90N06S404ATMA1 is a high-performance, extremely low-voltage, N-channel, depletion-mode, Field-Effect Transistor (FET). It is specially designed in a 300mil SO-8 package, which offers an easy surface-mounting on the PCB board. This type of field-effect transistor (FET) utilizes an insulated gate that is used to control the flow of electrons through the channel, creating a signal path between the source and drain.
As one of the main applications of the IPD90N06S404ATMA1, it is widely used in trans-impedance amplifiers (TIAs) network, where very low distortion, fasted settling time, and lowest current consumption are required. Moreover, this FET is perfectly suitable for both driving of P-channel and N-channel MOSFETs. On top of that, it can be used in analog and digital circuitry for various applications such as amplifiers, sensors, and switches.
The internal structure of the IPD90N06S404ATMA1 is a simplified Si-doped junction gate field-effect transistor (JFET). This type of FET facilitates a wide operating temperature range of -40°C up to +125°C. In addition, it has an excellent thermal stability for long-term reliability.
The IPD90N06S404ATMA1 is designed to work in three different modes. The depletion mode is where the FET restricts the flow of electrons through the channel, effectively functioning as a switch between the gate and drain. This allows the user to control the current in the circuit when the Vgs is reduced to 0 V.
When the IPD90N06S404ATMA1 is in the enhancement mode, more electrons are able to flow through the channel creating an increased flow of electrons between the drain and source. In this mode, the FET starts to actively modulate current based on the voltage applied to the gate.
Finally, when the FET is in the linear mode, it is able to conduct an even flow of electrons from drain to source. In this mode, a linear relationship between the gate voltage and current passing through the device is observed.
The IPD90N06S404ATMA1 is one of the most efficient FETs available and is highly recommended for applications that require high levels of current control. It is easy to operate and well-suited for a wide range of applications. With its various modes and low-voltage threshold, the IPD90N06S404ATMA1 can be utilized in analog and digital circuits for many purposes such as amplifiers, sensors, switches and other electronic components.
The specific data is subject to PDF, and the above content is for reference
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