IRFB41N15D Allicdata Electronics
Allicdata Part #:

IRFB41N15D-ND

Manufacturer Part#:

IRFB41N15D

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 150V 41A TO-220AB
More Detail: N-Channel 150V 41A (Tc) 200W (Tc) Through Hole TO-...
DataSheet: IRFB41N15D datasheetIRFB41N15D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFB41N15D is a part of the family of field effect transistors (FETS) and metal oxide semiconductor field effect transistors (MOSFETs) manufactured by International Rectifier Corp. It is a popular part in both the IRFB41N15D series and the IRF series of MOSFETs, specifically in single-channel devices. The integrated device combines both an N-channel anode and a P-channel cathode.

The IRFB41N15D is an excellent choice for a variety of applications because of its low on-state resistance (RDS(on)) and its low threshold voltage (VGS(th)) - despite its relatively small size. It is available in the TO-220AB package, making it a relatively low-cost choice for applications that require a low RDS(on), low VGS(th), and a small package size. Additionally, the IRFB41N15D is RoHS compliant.

The primary applications for the IRFB41N15D are found in power management, cell phone chargers and power supplies, automotive systems, motor control, and low-voltage motor control. It is also suitable for use in high-frequency switching applications. Additionally, this device is often used as a low-side MOSFET in an H-Bridge circuit configuration, due to its low on-state resistance. In these applications, the device operates in an on/off mode, and its self-limiting thermal characteristics make it well-suited for this type of use.

The IRFB41N15D operates under the same principle as other FETS and MOSFETs, namely as a voltage-controlled semiconductor device. This type of device is controlled by a series of gate signals. When the gate voltage (VGS) is less than the threshold voltage (VGS(th)), the device continues to remain in an off state. However, when the gate voltage (VGS) exceeds the threshold voltage (VGS(th)), the device is switched from an off state to an on state. Likewise, when the gate voltage (VGS) drops below the threshold voltage (VGS(th)), the device is switched off. The on-state resistance (RDS(on)) is directly proportional to the gate voltage (VGS), so the device can be used to regulate current and/or voltage in a circuit.

The IRFB41N15D is capable of achieving high-speed switching performance, making it a popular choice for many power management and motor control applications. The device is capable of operating at frequencies of up to 1MHz, and can support peak currents up to 6A. This makes it well-suited for applications that require high-speed switching and high-current operation. In addition, the device has a maximum drain-source voltage of 600V, making it suitable for higher voltage applications.

Overall, the IRFB41N15D is an excellent choice for applications that require a low-cost, low-package size, high-performance device. Its low RDS(on) and low VGS(th) make it ideal for a multitude of applications, while its RoHS compliance make it suitable for even the most environmentally-conscious applications. Its capabilities and performance make it a great choice for a range of power management, motor control, and high-frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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