| Allicdata Part #: | IRFB41N15D-ND |
| Manufacturer Part#: |
IRFB41N15D |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 150V 41A TO-220AB |
| More Detail: | N-Channel 150V 41A (Tc) 200W (Tc) Through Hole TO-... |
| DataSheet: | IRFB41N15D Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2520pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 45 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 41A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRFB41N15D is a part of the family of field effect transistors (FETS) and metal oxide semiconductor field effect transistors (MOSFETs) manufactured by International Rectifier Corp. It is a popular part in both the IRFB41N15D series and the IRF series of MOSFETs, specifically in single-channel devices. The integrated device combines both an N-channel anode and a P-channel cathode.
The IRFB41N15D is an excellent choice for a variety of applications because of its low on-state resistance (RDS(on)) and its low threshold voltage (VGS(th)) - despite its relatively small size. It is available in the TO-220AB package, making it a relatively low-cost choice for applications that require a low RDS(on), low VGS(th), and a small package size. Additionally, the IRFB41N15D is RoHS compliant.
The primary applications for the IRFB41N15D are found in power management, cell phone chargers and power supplies, automotive systems, motor control, and low-voltage motor control. It is also suitable for use in high-frequency switching applications. Additionally, this device is often used as a low-side MOSFET in an H-Bridge circuit configuration, due to its low on-state resistance. In these applications, the device operates in an on/off mode, and its self-limiting thermal characteristics make it well-suited for this type of use.
The IRFB41N15D operates under the same principle as other FETS and MOSFETs, namely as a voltage-controlled semiconductor device. This type of device is controlled by a series of gate signals. When the gate voltage (VGS) is less than the threshold voltage (VGS(th)), the device continues to remain in an off state. However, when the gate voltage (VGS) exceeds the threshold voltage (VGS(th)), the device is switched from an off state to an on state. Likewise, when the gate voltage (VGS) drops below the threshold voltage (VGS(th)), the device is switched off. The on-state resistance (RDS(on)) is directly proportional to the gate voltage (VGS), so the device can be used to regulate current and/or voltage in a circuit.
The IRFB41N15D is capable of achieving high-speed switching performance, making it a popular choice for many power management and motor control applications. The device is capable of operating at frequencies of up to 1MHz, and can support peak currents up to 6A. This makes it well-suited for applications that require high-speed switching and high-current operation. In addition, the device has a maximum drain-source voltage of 600V, making it suitable for higher voltage applications.
Overall, the IRFB41N15D is an excellent choice for applications that require a low-cost, low-package size, high-performance device. Its low RDS(on) and low VGS(th) make it ideal for a multitude of applications, while its RoHS compliance make it suitable for even the most environmentally-conscious applications. Its capabilities and performance make it a great choice for a range of power management, motor control, and high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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IRFB41N15D Datasheet/PDF