IPI030N10N3GXKSA1

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The IPI030N10N3GXKSA1 is a type of field-effect transistor (FET) that is specifically labeled as a single MOSFET device. This n-channel device is a highly efficient product that can be used as a power switch that is fast and responsive to a user’s input. The device is typically used to control the conduction and switching of power in applications that include motor drives, relay and static switches, battery chargers and AMPL. The IPI030N10N3GXKSA1 is both ESD and reverse voltage protected, meaning that it can stand up to high voltages without causing damage. The device also has an integrated body diode, allowing for bidirectional current flow.

The IPI030N10N3GXKSA1 is capable of working with drain-drain voltages of up to 20V, drain-source voltages of up to 30V and can handle peak drain currents of 30A. The device is also BVDSS rated at 60V, allowing for up to 6A continuous drain current. This is an improvement over some of its predecessors, which were limited by lower drain voltages. The device is also rated for an avalanche energy of 80mJ, meaning that it can handle higher input power without suffering from damage.

The working principle of the IPI030N10N3GXKSA1 is fairly simple. The device uses a gate-source voltage in order to turn the device on and off. When the gate-source voltage is at low levels (below the threshold voltage), the device is off, essentially blocking current from flowing. When the gate-source voltage goes above the threshold voltage, the device is on, with its drain-source voltage dropping as current flows through it. The device will stay on until the gate-source voltage drops below the threshold voltage at which point it will turn off again.

The IPI030N10N3GXKSA1 is an ideal choice for power switch applications due to its fast response and low on resistance. The device has a maximum on-resistance (RDS(ON)) of just 11mΩ, meaning that it has the potential to handle higher levels of current without suffering from too much power loss. The device’s higher peak current ratings also make it ideal for high-power applications, such as motor drives and static switches.

In conclusion, the IPI030N10N3GXKSA1 is a single MOSFET device that is designed to provide efficient power switch applications. The device can handle drain-drain voltages of up to 20V and drain-source voltages of up to 30V and it has a maximum on-resistance (RDS(ON)) of just 11mΩ. The device is also BVDSS rated at 60V and is capable of handling peak drain currents of 30A. Its fast response and low on resistance make it ideal for use in motor drives, static switches, battery chargers and other high-power applications.

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