IRFR4104TRL

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	140W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2950pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	89nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	5.5 mOhm @ 42A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	42A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The IRFR4104TRL is an advanced MOSFET (metal oxide semiconductor field-effect transistor) that is specifically designed for high-speed switching applications. It can be used in a variety of electronic devices, such as TTL (transistor-transistor logic) and CMOS (complementary metal-oxide-semiconductor) circuits, switching power supplies, and motor drives. The IRFR4104TRL is a unique MOSFET, as it can be used as a power MOSFET or a voltage regulator. In the power MOSFET mode, the device is capable of driving high currents with very low on-state resistance. This makes it ideal for high-speed switching applications in which power dissipation is a concern.The IRFR4104TRL is a single-channel MOSFET, meaning it consists of one source, gate, and drain. This reduces the complexity of driving and controlling the device, making it easy to use. Additionally, it has a low gate-charge and gate resistance, which makes it highly suitable for high-speed switching applications. The IRFR4104TRL also has various on-board protection features that guard against dangerous conditions. This includes over-voltage protection, over-current protection, and reverse-current protection. These features help prevent damage to the device and the overall circuit. In terms of the device\'s working principle, it operates by utilizing the electric field created by the gate terminal to control the flow of current between the source and drain. When a positive voltage is applied to the gate terminal, the electric field created causes a channel to be created between the source and drain, allowing current to flow. By then changing the voltage applied to the gate terminal, the electric field created can be changed, which in turn changes the resistance between source and drain, thus controlling the amount of current that can flow. The IRFR4104TRL is a versatile device, with a wide range of possible applications. It is a cost-effective solution for power MOSFET and voltage regulator applications, as well as a reliable solution for high-speed switching applications due to its protection features and low gate resistance. In summary, the IRFR4104TRL is an advanced single-channel MOSFET that is designed for high-speed switching applications. It has a low on-state resistance, making it suitable for applications in which power dissipation is a concern. Additionally, it boasts a wide range of on-board protection features, as well as a low gate resistance for high-speed switching performance. It is a multi-purpose device that is ideal for a variety of electronic applications, from power MOSFET and voltage regulator applications to switching power supplies and motor drives.

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