IPP60R120P7XKSA1

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IPP60R120P7XKSA1 is a single-in-line reverse conductive insulated gate bipolar transistor (IGBT) module from IXYS. It is designed for high-power requirement applications such as motor controls, drives, robotics, and renewable energy systems. This IGBT module is designed for high operating temperature, high current, and high manufacturing and reliability performance. Its optimized conversion and reliability management functions allow it to be used in wide range of power sector applications.
The construction of the IGBT module IPP60R120P7XKSA1 includes of two terminals, anode and cathode, with an insulated external gate at each pole, and a planar passivation layer. The planar passivation is a positive insulation, and the device is intended to be operated in the reverse conducting mode. The internal connection of all terminals is made with an epoxy-glass body protected by a gold-plated wrapping.
The IPP60R120P7XKSA1 module has a maximum current rating of 60A and a reverse supply voltage rating of 100V. The on-state voltage drop is 3.3V. The module is rated for a nominal thermal resistance at the junction to heatsink (Rth J-HS) of 0.5°C/W and a operating temperature range of -40 to +125°C. The total package power (PD) for the IPP60R120P7XKSA1 IGBT module is 80W. The maximum frequency of operation is 8 kHz, with a typical switching time of 900ns.
IPP60R120P7XKSA1 is suitable for applications requiring high power conduction and low power dissipation. It is especially suitable for high current and continuous current operation, such as large-scale energy conversion, motor control, power supplies, and so on. Primarily, applications such as HVAC, solar system, renewable energy and railway traction motors, can use this IGBT module. Its power capabilities and switching speed make it a suitable choice for applications requiring fast turn-on and turn-off times.
Working Principle of IGBT Module– IPP60R120P7XKSA1
When the IGBT [insulated gate bipolar transistor] gate is not activated, it will act as an insulator. In this off-state, current does not flow in the circuit. When the gate is activated, the field effect transistor (FET) will turn on, resulting in current flow through the circuit. When the gate is deactivated, the FET will turn off, and no current will flow in the circuit. As compared with a bipolar transistor, IGBTs have attractive features such as low voltage driving, fast switching, and no shoot-through.
The low voltage driving of an IGBT allows it to be easily integrated into applications requiring remote or low voltage control. The fast switching speed of the IGBT makes it suitable for applications that require high speed control, such as robotics and motor control. The integrated gate does not allow for the possibility of the “shoot-through” currents, which are common in bipolar transistors.
Conclusion
The IGBT module IPP60R120P7XKSA1 is designed for high power applications, such as motor control, drives, robotics, and renewable energy systems. It has a maximum current rating of 60A and a reverse supply voltage rating of 100V. The on-state voltage drop is 3.3V and the module is rated for a thermal resistance at the junction to heatsink (Rth J-HS) of 0.5°C/W. The maximum frequency of operation is 8 kHz with a typical switching time of 900ns and a package power (PD) rating of 80W. This IGBT is suitable for applications requiring high power conduction and low power dissipation.

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