IRFH7184TRPBF

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IRFH7184TRPBF is a type of field-effect Transistor (FET). It is classified as a single MOSFET, because it consists of a single semiconductor device with source, drain and gate terminals. FETs are active devices, meaning that they can amplify, switch and attenuate signals. They are often used in many digital and analog circuits, because of their low-power requirement and high switching speed.

The IRFH7184TRPBF FET has a number of useful features in its application field. It is rated at 100V/4A drain source voltage, 40V/2A source gate voltage, 0.04 Ohm maximum rated drain-source on-state resistance, and has a commutated body diode with a 5ns maximum forward recovery time. In addition, it is designed with a small package of TO-252, and is lead (Pb) free. This makes it ideal for space-constrained and environmentally-friendly designs.

Also, this FET provides excellent signal performance. It has a low input capacitance for the FET gate, reduced signal propagation delay and minimized signal distortion. This makes it a versatile component for signal conditioning, signal source buffering and high speed switching.

The IRFH7184TRPBF transistor has a simple working principle. When a voltage on the gate is applied, a current is driven through the Gate-Drain junction of the transistor. This will in turn induce a voltage between the Source and Drain, resulting in a channel of electrons flowing through the FET. This current flow is then controlled by the voltage applied to the FET gate.

The IRFH7184TRPBF FET is an ideal choice for many applications requiring high-speed switching and signal conditioning. Its small package, Pb-free compliant rating, low input capacitance and high speed recovery time make it a suitable component for many circuit designs. Its simple working principle, as well as its excellent signal performance, make it an excellent choice for many different circuits applications.

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