IPD60R600P7SAUMA1

Vgs(th) (Max) @ Id:	4V @ 80µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	363pF @ 400V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	9nC @ 10V
Series:	CoolMOS™ P7
Rds On (Max) @ Id, Vgs:	600 mOhm @ 1.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The technology of IPD60R600P7SAUMA1 is used in so many industrial applications as it has a range of features which can be utilized to make industrial processes more efficient. This innovative technology is part of a series of devices which have included the use of Field Effect Transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). The technology is used within the IPD60R600P7SAUMA1 devices and these are categorized under the group known as Single FETs and MOSFETs.The IPD60R600P7SAUMA1 is a type of MOSFET which has the advantage of being able to be used at higher current applications than conventional FETs. This is because the device has a thicker gate oxide which reduces current leakage even at high power applications. The device also has a low on-resistance which gives it the capability of controlling higher current outputs. The device also features a low operating temperature so it can be used at a wide range of industrial applications.The device has two operation states which are referred to as the ‘On’ state and the ‘Off’ state. In the ‘On’ state the device is conducting and in the ‘Off’ state the device is not conducting. This can be useful in controlling various devices, such as digital circuits and motors, as the level of current that is allowed to flow through the device can be controlled. By controlling the amount of current allowed to flow through the device, the user can increase or decrease the amount of power available to the device.The IPD60R600P7SAUMA1 is typically used within the power electronics industry, in applications such as switching power supplies, DC-to-AC inverters and DC motor controllers. In these applications the device is used to control the level of current that is allowed to flow in order to ensure a smooth operation of the device. The device also features a low-on resistance which makes it beneficial for high-current applications.The technology of the IPD60R600P7SAUMA1 is also used in fields such as telecommunication and automotive systems. This is due to the device possessing features that offer a variety of advantages to the user, such as a low power consumption and high speed operation. This makes it suitable for using within mobile and automotive systems.The IPD60R600P7SAUMA1 working principle follows the same principles of a standard FET as the device is made up of a source, gate and drain. The source is the electrical connection through which the current flows into the device, while the gate is the control element which is used to control the current flowing through the device. The drain is the electrical connection through which the current flows out of the device. When a voltage is applied to the gate of the device it will cause a change in the capacitance of the gate, which will result in a change in the electrical characteristics of the device. This change in electrical characteristics results in a change in the current flowing through the device, which can be used to control a wide range of devices and electronics systems.The IPD60R600P7SAUMA1 is a highly efficient and reliable device which has been used in numerous applications within the power electronics and automotive industries. The device is suitable for use in a range of applications due to its low operating temperature and low power consumption. Furthermore, it features a low on-resistance, which makes it ideal for high power applications. As such, it makes an ideal device for use in various industrial applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description