BSS123L6327HTSA1 Allicdata Electronics
Allicdata Part #:

BSS123L6327HTSA1TR-ND

Manufacturer Part#:

BSS123L6327HTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 170MA SOT-23
More Detail: N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount...
DataSheet: BSS123L6327HTSA1 datasheetBSS123L6327HTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 69pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 2.67nC @ 10V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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BSS123L6327HTSA1 is a type of Transistors - FETs, MOSFETs - Single. This device is designed for use as a power driver which is used to switch heavy currents for applications such as industrial motors, automotive engine control circuits and power relays. It is a low voltage, high-power device that can be used to regulate devices in a wide range of operating conditions. This device is manufactured by Infineon Technologies, a manufacturer of integrated circuits and related products.

BSS123L6327HTSA1 has an integrated power MOSFET and it is packaged in an SO-20 package which is perfect for automotive powertrain applications. This device features a high nine-volt breakdown voltage, a low on-state resistance, and a low gate-source threshold voltage which allows it to be used in a wide range of applications. Furthermore, it has good temperature stability and very low leakage current, while a wide range of switching frequencies can be accommodated.

When it comes to the application field of the BSS123L6327HTSA1, this device can be used for switching low voltage power supply, for motor control, for automotive engine control circuits, for switching audio circuits, for gate drive circuit, and for power relays. It can also be used for load switching applications such as automotive body contouring systems, lighting systems, and motor drives.

When it comes to the working principle of the BSS123L6327HTSA1, it is based on the principle of metal oxide semiconductor field effect transistor. This device works by controlling the number of electrons flowing between its source and drain by applying a voltage to its gate. The field generated by this voltage creates a barrier that only allows electrons to pass through the channel when the voltage applied to the gate exceeds a certain level. This level of voltage, called the threshold voltage, is one of the important characteristics of this device.

The working principle of the BSS123L6327HTSA1 consists of several components. First, there is an n-type source and drain made of metal and an insulating layer of metal oxide between them. The gate voltage applied to the gate controls the amount of current that is allowed to pass through the channel between the source and drain. Second, there is a voltage divider which is used to provide the proper gate voltage for the device. The voltage divider is composed of a series of resistors and capacitors which are connected in parallel. Finally, there is a load resistor which is used to divide the drain voltage across the load.

In conclusion, BSS123L6327HTSA1 is a type of Transistor - FETs, MOSFETs - Single designed for use as a power driver to switch heavy currents for applications such as motors, automotive engine control circuits and power relays. It has a high nine-volt breakdown voltage, low on-state resistance, and low gate-source threshold voltage. The application field of the BSS123L6327HTSA1 includes switching low voltage power supply, motor control, automotive engine control circuits, switching audio circuits, gate drive circuit, and power relays. The working principle of the BSS123L6327HTSA1 is based on the metal oxide semiconductor field effect transistor.

The specific data is subject to PDF, and the above content is for reference

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