IRFB3004GPBF Allicdata Electronics
Allicdata Part #:

IRFB3004GPBF-ND

Manufacturer Part#:

IRFB3004GPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 195A TO220AB
More Detail: N-Channel 40V 195A (Tc) 380W (Tc) Through Hole TO-...
DataSheet: IRFB3004GPBF datasheetIRFB3004GPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 380W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFB3004GPBF is a single n-channel logic level Power MOSFET, developed by International Rectifiers (IR). It is well suited for power management and conversion applications in consumer, industrial and automotive electronics. This device is designed to reduce switching losses and improve efficiency of SMPS, DC-DC and other current-switching applications. The IRFB3004GPBF is a highly reliable, low-cost solution for applications that require large amounts of power in a small package.

At its core, the IRFB3004GPBF is a junction field-effect transistor (JFET), or unipolar transistor. It consists of two terminals, the source and the drain. When a charge is applied to the gate (control electrode) of the FET, a conductive channel forms between the source and the drain. The circuit current then flows in one direction. The length and width of the channel can be adjusted by changing the voltage on the gate.

The IRFB3004GPBF is a logic level Power MOSFET with a maximum gate-source voltage (VGS) of 4 volts. This device is equipped with an extremely low gate threshold voltage (VGS(th)) of 2.4 volts, allowing for the control of high voltages and high peak currents in the system with low gate drive voltage. Its low input capacitance (Ciss) allows for fast switching speed. Its low on-resistance (RDS(on)) of 3.2 mOhms allows for high efficiency and minimal heat dissipation.

The IRFB3004GPBF is also equipped with a temperature sensing diode, allowing a system to monitor and manage the device’s thermal performance. This ensures that the FET can operate at its maximum efficiency while running in a wide temperature range. The device also features a wide range of ESD and latch-up protection levels, making it a good choice for applications that require high reliability.

The IRFB3004GPBF is widely used in power management and conversion applications, such as power supplies and DC-DC converters. It can be used as a power switch, a variable speed fan control, an active ORing device, a power amplifier and an overcurrent-protection device for LED circuits. It has also been used in motor control applications such as in motor braking, electrical vehicle traction and the control of alternating current (AC) motors.

In conclusion, the IRFB3004GPBF is a reliable and cost-effective single n-channel logic level Power MOSFET. It is highly energy efficient and offers low on-resistance, as well as temperature and voltage protection. Its low input capacitance and VGS make it suitable for fast switching applications in various power management and conversion systems. The device provides excellent ESD and latch-up protection, making it the perfect choice for reliable and high-performance designs.

The specific data is subject to PDF, and the above content is for reference

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