![IRFB3004GPBF Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IRFB3004GPBF-ND |
Manufacturer Part#: |
IRFB3004GPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 195A TO220AB |
More Detail: | N-Channel 40V 195A (Tc) 380W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 380W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 240nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.75 mOhm @ 195A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFB3004GPBF is a single n-channel logic level Power MOSFET, developed by International Rectifiers (IR). It is well suited for power management and conversion applications in consumer, industrial and automotive electronics. This device is designed to reduce switching losses and improve efficiency of SMPS, DC-DC and other current-switching applications. The IRFB3004GPBF is a highly reliable, low-cost solution for applications that require large amounts of power in a small package.
At its core, the IRFB3004GPBF is a junction field-effect transistor (JFET), or unipolar transistor. It consists of two terminals, the source and the drain. When a charge is applied to the gate (control electrode) of the FET, a conductive channel forms between the source and the drain. The circuit current then flows in one direction. The length and width of the channel can be adjusted by changing the voltage on the gate.
The IRFB3004GPBF is a logic level Power MOSFET with a maximum gate-source voltage (VGS) of 4 volts. This device is equipped with an extremely low gate threshold voltage (VGS(th)) of 2.4 volts, allowing for the control of high voltages and high peak currents in the system with low gate drive voltage. Its low input capacitance (Ciss) allows for fast switching speed. Its low on-resistance (RDS(on)) of 3.2 mOhms allows for high efficiency and minimal heat dissipation.
The IRFB3004GPBF is also equipped with a temperature sensing diode, allowing a system to monitor and manage the device’s thermal performance. This ensures that the FET can operate at its maximum efficiency while running in a wide temperature range. The device also features a wide range of ESD and latch-up protection levels, making it a good choice for applications that require high reliability.
The IRFB3004GPBF is widely used in power management and conversion applications, such as power supplies and DC-DC converters. It can be used as a power switch, a variable speed fan control, an active ORing device, a power amplifier and an overcurrent-protection device for LED circuits. It has also been used in motor control applications such as in motor braking, electrical vehicle traction and the control of alternating current (AC) motors.
In conclusion, the IRFB3004GPBF is a reliable and cost-effective single n-channel logic level Power MOSFET. It is highly energy efficient and offers low on-resistance, as well as temperature and voltage protection. Its low input capacitance and VGS make it suitable for fast switching applications in various power management and conversion systems. The device provides excellent ESD and latch-up protection, making it the perfect choice for reliable and high-performance designs.
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