Interface input expander - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
NTMFS4C09NBT1G- ND	NTMFS4C09NBT1G	ON Semiconductor	View more Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Power Dissipation (Max): 760mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount	1000 Order	--
NTMFS4C09NBT3G- ND	NTMFS4C09NBT3G	ON Semiconductor	View more Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Power Dissipation (Max): 760mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount	1000 Order	5000+: $0.142
VP0300B-E3-ND	VP0300B-E3	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1A, 12V Vgs(th) (Max) @ Id: 4.5V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V	1000 Order	1+: $0
917-1088-2-ND	EPC2023	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 60A (Ta) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 40A, 5V Vgs(th) (Max) @ Id: 2.5V @ 20mA Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	8500 Order	500+: $3.2566
TPH3208PD-ND	TPH3208PD	Transphorm	View more Packaging: Tube Part Status: Last Time Buy FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V Operating Temperature: -55C ~ 150C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	160 Order	1+: $7.8246 10+: $7.0421 50+: $6.4162 100+: $5.7902
497-13599-5-ND	STFI6N65K3	STMicroelectronics	View more Series: SuperMESH3 Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50A Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 50V	500 Order	1+: $5.56
IRLL1503-ND	IRLL1503	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 75A (Ta) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 140A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V Mounting Type: Through Hole Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
NTTFS4965NFTWG- ND	NTTFS4965NFTWG	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 16.3A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 29.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 15V Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	1000 Order	5000+: $0.8006
2N7002T-TPMSTR- ND	2N7002T-TP	Micro Commercial Co	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 115mA Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 13.5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 250A Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power Dissipation (Max): 150mW Operating Temperature: -55C ~ 150C Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	1000 Order	3000+: $0.0467
568-9775-5-ND	BUK95150-55A,12 7	NXP USA Inc	View more Series: TrenchMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 137 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 339pF @ 25V Power Dissipation (Max): 53W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
AO4407B-ND	AO4407B	Alpha & Omega Semiconductor Inc.	View more Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13 mOhm @ 12A, 20V Vgs(th) (Max) @ Id: 2.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount	1000 Order	--
IRFSL4127PBF-ND	IRFSL4127PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 72A (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 50V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1000+: $1.8727
HCT7000MTX-ND	HCT7000MTX	TT Electronics/Optek Technology	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Vgs (Max): 40V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Power Dissipation (Max): 300mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-SMD Package / Case: 3-SMD, No Lead	1000 Order	100+: $18.5472
568-9738-5-ND	BUK9575-100A,12 7	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 1704pF @ 25V Power Dissipation (Max): 99W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
DN2535N5-G-ND	DN2535N5-G	Microchip Technology	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25C: 500mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 15W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	92 Order	1+: $0.819 25+: $0.6814 100+: $0.6269
RFP14N05-ND	RFP14N05	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
BTS115ANKSA1-ND	BTS115ANKSA1	Infineon Technologies	View more Series: TEMPFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 15.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 120 mOhm @ 7.8A, 4.5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: P-TO220AB Package / Case: TO-220-3	1000 Order	1+: $0
2SK2095N-ND	2SK2095N	ROHM Semiconductor	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Power Dissipation (Max): 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
2SK1341-E-ND	2SK1341-E	Renesas Electronics America	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3 Ohm @ 3A, 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 10V Power Dissipation (Max): 100W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	1+: $0
FDMC6683PZ-ND	FDMC6683PZ	ON Semiconductor	View more Series: PowerTrench Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 7995pF @ 10V Power Dissipation (Max): 26W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3)	1000 Order	--
RFP15N05L-ND	RFP15N05L	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 140 mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2V @ 250A Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
2SK2848-ND	2SK2848	Sanken	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Power Dissipation (Max): 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	1000 Order	4000+: $0.7825
NTP5412NG-ND	NTP5412NG	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
JAN2N6898-ND	JAN2N6898	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 15.8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AA, TO-3	1000 Order	1+: $0
RFP70N03-ND	RFP70N03	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 70A (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 70A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 260nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
SSM3K35MFVL3F-N D	SSM3K35MFV,L3F	Toshiba Semiconductor and Storage	View more Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: VESM Package / Case: SOT-723	1000 Order	1+: $0
FCPF380N60E-F15 2-ND	FCPF380N60E-F15 2	ON Semiconductor	View more Series: SuperFET II Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 10.2A (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Power Dissipation (Max): 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	950 Order	1+: $2.2491 50+: $1.8095 100+: $1.6486 500+: $1.335 1000+: $1.1259
FKV550T-ND	FKV550T	Sanken	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V Power Dissipation (Max): 35W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	1000 Order	4000+: $0.9292
568-9802-5-ND	BUK7535-55A,127	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 35 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 872pF @ 25V Power Dissipation (Max): 85W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
BTS110E3045ANTM A1TR-ND	BTS110E3045ANTM A1	Infineon Technologies	View more Series: TEMPFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220AB Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
SMP3003-DL-E-ND	SMP3003-DL-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 100A (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 20V Power Dissipation (Max): 90W (Tc) Mounting Type: Surface Mount Supplier Device Package: SMP-FD Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
RHU003N03T106TR -ND	RHU003N03T106	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 300mA, 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V Power Dissipation (Max): 200mW (Ta) Mounting Type: Surface Mount Supplier Device Package: UMT3 Package / Case: SC-70, SOT-323	1000 Order	3000+: $0.0638
SIJ462DP-T1-GE3 TR-ND	SIJ462DP-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 46.5A(Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	3000+: $0.4382
BUK9515-100A,12 7-ND	BUK9515-100A,12 7	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V Power Dissipation (Max): 230W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
568-9807-5-ND	BUK7520-55A,127	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1592pF @ 25V Power Dissipation (Max): 118W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
PH1730AL,115-ND	PH1730AL,115	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 77.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5057pF @ 12V Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669, 4-LFPAK	1000 Order	1+: $0
BUK9Y19-55B/C2, 115-ND	BUK9Y19-55B/C2, 115	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 46A Rds On (Max) @ Id, Vgs: 17.3 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1992pF @ 25V Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669, 4-LFPAK	1000 Order	1+: $0
NTTFS4965NFTAG- ND	NTTFS4965NFTAG	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 16.3A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 29.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 15V Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	1000 Order	1500+: $0.8929
917-1133-2-ND	EPC2022	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 12mA Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	4500 Order	500+: $3.4588
APL502LG-ND	APL502LG	Microsemi Corporation	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 90 mOhm @ 29A, 12V Vgs(th) (Max) @ Id: 4V @ 2.5mA Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V Power Dissipation (Max): 730W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	130 Order	--

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