Series:	--
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Input Capacitance (Ciss) (Max) @ Vds:	1252pF @ 15V
FET Feature:	--
Power Dissipation (Max):	760mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount

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Introduction

NTMFS4C09NBT1G is a power MOSFET (metal-oxide semiconductor field-effect transistor) used for switching applications and other circuitry needs. It is designed to provide higher power, efficiency and ruggedness than a bipolar transistor. This device is specifically designed for automotive and industrial applications which must be able to withstand high temperature ranges as well as able to provide improved flexibility for applications such as electronic load controllers, reverse-current protection, electronic transmission, and motor speed control.

Application Field

The primary application field of this device includes automotive, industrial and commercial applications. Due to its higher operating temperature range and extra power capacity, the device is used in the following types of applications and circuits:1. Automotive applications: The device is used in many automotive components and systems, like electric line controllers, anti-lock braking systems, vehicle batteries, air conditioning systems, oxygen sensor feedback control unit, etc.2. Industrial applications: The device is often used in industrial applications like motor controls, HVAC (Heating, Ventilating and Air-Conditioning) systems, welding control, power transformers and generators, etc.3. Commercial applications: This device is widely used in commercial applications like high-power amplifiers, switching power supplies and battery charging systems.

Working Principle

The NTMFS4C09NBT1G is a unipolar type of MOSFET, composed of two main parts, the source and the drain. The source is the side where the voltage flow enters and the drain is the side where the voltage flow exits. The MOSFET also consists of the gate, which is used to control the voltage flow.The NTMFS4C09NBT1G is based on the working principle of a power MOSFET. The device is composed of a thin gate oxide layer between the source and the drain which is used to control the flow of electric current from the source to the drain. This thin layer of oxide acts as an insulator, preventing current from flowing until a positive gate voltage is applied. When a positive gate voltage is applied, it causes an electric field across the oxide layer which creates an electron inversion channel in the oxide. This electron inversion channel allows current to flow from source to drain and allows the MOSFET to act as a switch. The device is designed to switch quickly and efficiently, due to its high current and voltage carrying capacity. It is also capable of operating at high temperature ranges, thanks to its robust construction and structure, which makes it suitable for automotive and industrial applications.

Conclusion

NTMFS4C09NBT1G is a unipolar type of MOSFET which is used in many different types of applications, like automotive, industrial and commercial. It is designed to provide higher power, efficiency and ruggedness than a bipolar transistor and is capable of operating at high temperature ranges. The device is composed of a thin gate oxide layer between the source and the drain which is used to control the flow of electric current from the source to the drain, when the positive gate voltage is applied.

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