Allicdata Part #: | NTTFS4965NFTWG-ND |
Manufacturer Part#: |
NTTFS4965NFTWG |
Price: | $ 0.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 64A U8FL |
More Detail: | N-Channel 30V 16.3A (Ta), 64A (Tc) Surface Mount ... |
DataSheet: | NTTFS4965NFTWG Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.80058 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 16.3A (Ta), 64A (Tc) |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 29.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2075pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Package / Case: | 8-PowerWDFN |
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NTTFS4965NFTWG is a member of the popular, and expanding, family of enhancement-mode metal-oxide semiconductor field effect transistors (MOSFET). The NTTFS4965NFTWG is a non-polarized, surface-mount device that offers a low On-state resistance, along with great power handling capabilities. As with all enhancement-mode MOSFETs, the NTTFS4965NFTWG can be operated at both positive and negative gate-source voltages.
The NTTFS4965NFTWG is widely employed in switching power supplies, amplifiers, and various other types of power applications. Its low On-state resistance allows it to offer low power losses while still offering high efficiency and power handling capabilities. For example, its small physical size and low On-state resistance can allow a power supply to be designed which offers wattage levels well beyond what would normally be achievable with a traditional MOSFET.
The main feature of the NTTFS4965NFTWG is its continuous drain current ratings, which range from -25A to +50A. This makes it ideal for applications requiring high duty cycle and low resistance. In addition, the low gate-source capacitance makes it highly suitable for high frequency operation. This feature also makes the NTTFS4965NFTWG great for use in high power switching applications, such as switching power supplies.
The working principle of the NTTFS4965NFTWG is based on the transistor\'s ability to control the current flowing between its drain and source terminals, by varying the voltage applied to its gate. Since it is an enhancement-mode MOSFET, no gate current is required (as with a conventional N-channel MOSFET) for the device to perform its operation. Thus, the gate voltage can be made as low as 0V without any effect on performance.
The NTTFS4965NFTWG also features a high maximum operating temperature range of +150°C, making it suitable for use in a wide variety of environments. This wide temperature range allows it to be used in hot climates and harsh environments, where traditional transistors may not be able to handle the high temperatures.
In summary, the NTTFS4965NFTWG is a popular enhancement-mode surface-mount MOSFET. It features a high drain current rating, low On-state resistance, and low gate-source capacitance, making it ideal for use in switching power supplies, amplifiers, and various other types of power applications. Its wide maximum operating temperature range makes it suitable for use in hot climates and harsh environments. In addition, its small size and low gate-source capacitance make it great for use in high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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