| Allicdata Part #: | TPH3208PD-ND |
| Manufacturer Part#: |
TPH3208PD |
| Price: | $ 8.60 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Transphorm |
| Short Description: | MOSFET N-CH 650V 20A TO220 |
| More Detail: | N-Channel 650V 20A (Tc) Through Hole TO-220 |
| DataSheet: |  TPH3208PD Datasheet/PDF |
| Quantity: | 160 |
| 1 +: | $ 7.82460 |
| 10 +: | $ 7.04214 |
| 50 +: | $ 6.41617 |
| 100 +: | $ 5.79020 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Last Time Buy |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 650V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 400V |
| FET Feature: | -- |
| Operating Temperature: | -55°C ~ 150°C |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220 |
| Package / Case: | TO-220-3 |
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The TPH3208PD is a member of the advanced Calsonic-Kansei Dual N-Channel MOSFET family. It is packaged in a small 8-pin DIP package and a variety of lead-free package options. This product features low on-resistance, low gate charge, and high current carrying capacity.
The TPH3208PD offers a wide range of applications, including mobile phones, DDR memory modules, PCs, servers and other digital appliances. It is also used in industrial switching applications, as well as power conversion and motor control applications.
The TPH3208PD is a dual N-Channel MOSFET design, which combines the functions of both P-Channel and N-Channel devices in a single package. This device has a low on-resistance of 4.0 ohms max and a gate charge of only 2.4 nC maximum, which reduces switching losses thereby increasing efficiency and lowering costs.
The TPH3208PD is also suitable for high frequency switching applications as it has a low linear capacitance of 1.1pF and a small gate resistance of 0.7 ohms maximum. This device has a high dv/dt capability of 250V/ns, which enhances its ability to handle large signal currents and increases its reliability.
The working principle of the TPH3208PD is similar to that of traditional MOSFETs. It uses a Gate, Source and Drain connection structure. When a positive voltage is applied to the Gate, electrons are attracted from the Source to the Drain and current flows from the Drain to the Source. This current flow is what is used to control the electrical power in a device. The on-resistance or RDS is related to the Gate-Source voltage, VGS. When VGS is increased, the resistance will decrease, allowing for greater current flow.
In summary, the TPH3208PD is a highly reliable dual N-Channel MOSFET with a low RDS, which is suitable for a wide range of applications. Its small size, low gate charge and high dv/dt capability allow it to be used in high frequency switching applications. It is also ideal for industrial switching, power conversion, and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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