NTTFS4965NFTAG

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The NTTFS4965NFTAG is a popular FET used in applications ranging from power supplies to audio amplifiers. As its name suggests, it is a single-channel Power MOSFET with a low on-state resistance and high blocking voltage capability. It has been developed with a short gate threshold voltage to reduce switching losses and is suitable for applications where power efficiency is a priority.

The NTTFS4965NFTAG is composed of two silicon layer structures, the first being an n-type substrate which acts as the drain, and the second being the p-type layer which acts as the source. It is fabricated using a high temperature process and features a floating gate to ensure the transistor remains in its off-state until a certain voltage is met, when it begins to conduct. For added security and accuracy, the NTTFS4965NFTAG is first conditioned on the high circuit and then is tested using burn-in tests.

The main feature of this FET is its high blocking capability, capable of handling up to 600V of continuous drain-to-source voltage with a maximum junction temperature of 175°C. The low on-state resistance reduces conduction losses and provides superb static performance such as high power efficiency, low power dissipation, and superior transient response. The current capacity is also impressive, with an absolute maximum continuous drain current of 34 A, 32 A pulse, and an on-state resistance that varies from 400mΩ to 800mΩ.

The working principle of a Power MOSFET such as the NTTFS4965NFTAG is quite simple. At rest, the drain-to-source voltage is zero, causing the gate voltage to be in the off-state. However, when a positive gate-to-source voltage is applied, an electric field is created across the gate oxide, causing the FET to turn on by allowing current to flow between the drain and source. This enables the transistor to be used in applications such as power amplifiers, high side switches, and low side switches.

In summary, the NTTFS4965NFTAG is an excellent choice for applications requiring low power dissipation, high power efficiency, and superb static performance. With its excellent blocking voltage capability and low on-state resistance, the FET ensures superior transient response and is suitable for a variety of applications.

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