Multi-function input expander - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IRL3303STRLPBF- ND	IRL3303STRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRL1104STRLPBF- ND	IRL1104STRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
FDPF15N65YDTU-N D	FDPF15N65YDTU	ON Semiconductor	View more Series: UniFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 440 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3095pF @ 25V Power Dissipation (Max): 38.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 (Y-Forming) Package / Case: TO-220-3 Full Pack, Formed Leads	1000 Order	1+: $0
DMN3052LDITR-ND	DMN3052L-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2V, 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1.2V @ 250A Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 5V Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
IRLR130ATM-ND	IRLR130ATM	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 120 mOhm @ 6.5A, 5V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Power Dissipation (Max): 2.5W (Ta), 46W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
BSS84PL6433HTMA 1TR-ND	BSS84PL6433HTMA 1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8 Ohm @ 170mA, 10V Vgs(th) (Max) @ Id: 2V @ 20A Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 25V Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
785-1185-5-ND	AOT2N60	Alpha & Omega Semiconductor Inc.	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V Power Dissipation (Max): 74W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1000 Order	--
IRF7811WGTRPBFT R-ND	IRF7811WGTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2335pF @ 16V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRFH7934TR2PBFC T-ND	IRFH7934TR2PBF	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 24A (Ta), 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 2.35V @ 50A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 15V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	1000 Order	1+: $0
IRF8252PBF-ND	IRF8252PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.35V @ 100A Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5305pF @ 13V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
SI4684DY-T1-GE3 -ND	SI4684DY-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 15V Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
NTMFS4826NET3GO STR-ND	NTMFS4826NET3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9.5A (Ta), 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 12V Power Dissipation (Max): 870mW (Ta), 41.7W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	1+: $0
NP100P06PDG-E1- AY-ND	NP100P06PDG-E1- AY	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 10V Power Dissipation (Max): 1.8W (Ta), 200W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
RJK1055DPB-00#J 5TR-ND	RJK1055DPB-00#J 5	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 23A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V Power Dissipation (Max): 60W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	1000 Order	1+: $0
2SJ661-DL-E-ND	2SJ661-DL-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 38A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 39 mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 20V Power Dissipation (Max): 1.65W (Ta), 65W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMP-FD Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
AUIRLS3114Z-ND	AUIRLS3114Z	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 56A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 3617pF @ 25V Power Dissipation (Max): 143W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
AOI1N60-ND	AOI1N60	Alpha & Omega Semiconductor Inc.	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 1.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9 Ohm @ 650mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: -50C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	1000 Order	--
2SK4093TZ-E-ND	2SK4093TZ-E	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 500mA, 4V Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Power Dissipation (Max): 900mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92MOD Package / Case: TO-226-3, TO-92-3 Long Body	1000 Order	1+: $0
RJK1002DPN-E0#T 2-ND	RJK1002DPN-E0#T 2	Renesas Electronics America	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 70A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 35A, 10V Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 10V Power Dissipation (Max): 150W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
IPU50R950CEBKMA 1-ND	IPU50R950CEBKMA 1	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V Vgs(th) (Max) @ Id: 3.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V Power Dissipation (Max): 34W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
APTC60DAM24CT1G -ND	APTC60DAM24CT1G	Microsemi Corporation	View more Series: CoolMOS Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power Dissipation (Max): 462W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	1000 Order	1+: $0
568-10832-2-ND	PMV28UN,215	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 270A Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V Power Dissipation (Max): 380mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
FDD6637-F085TR- ND	FDD6637-F085	ON Semiconductor	View more Series: Automotive, AEC-Q101, PowerTrench Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 35V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 20V Power Dissipation (Max): 68W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
2SK4065-DL-1E-N D	2SK4065-DL-1E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 20V Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
2SK4099LS-1E-ND	2SK4099LS-1E	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 6.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 940 mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 30V Power Dissipation (Max): 2W (Ta), 35W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3FS Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
BFL4036-1E-ND	BFL4036-1E	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 9.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 520 mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 38.4nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 30V Power Dissipation (Max): 2W (Ta), 37W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3FS Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
GP1M016A060FH-N D	GP1M016A060FH	Global Power Technologies Group	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 470 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3039pF @ 25V Power Dissipation (Max): 48W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1000 Order	1+: $0
785-1708-5-ND	AOI2210	Alpha & Omega Semiconductor Inc.	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 3A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2065pF @ 100V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	1000 Order	1+: $0
785-1736-2-ND	AOD2904	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 10.5A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V Power Dissipation (Max): 2.7W (Ta), 125W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
RJK0355DSP-01#J 0-ND	RJK0355DSP-01#J 0	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V Power Dissipation (Max): 1.8W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
917-EPC2034ENGR TR-ND	EPC2034ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 31A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 100V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	1000 Order	1+: $0
NVMFS5C430NWFT3 G-ND	NVMFS5C430NWFT3 G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	1000 Order	1+: $0
AOTF10T60L-ND	AOTF10T60L	Alpha & Omega Semiconductor Inc.	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1346pF @ 100V Power Dissipation (Max): 43W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
SQD23N06-31L_GE 3-ND	SQD23N06-31L_GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 31 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V Power Dissipation (Max): 37W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.493
IRF3315STRLPBF- ND	IRF3315STRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IPB120N04S404AT MA1-ND	IPB120N04S404AT MA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 40A Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.5278
AOW12N50-ND	AOW12N50	Alpha & Omega Semiconductor Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1633pF @ 25V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	--
TN0604N3-G-P013 -ND	TN0604N3-G-P013	Microchip Technology	View more Packaging: Tape & Box (TB) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 700mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 1.6V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 20V Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	--
AOB288L-ND	AOB288L	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 10.5A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 40V Power Dissipation (Max): 2.1W (Ta), 93.5W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (DPak) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
SIHU7N60E-E3-ND	SIHU7N60E-E3	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V Power Dissipation (Max): 78W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	3000+: $0.6514

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