Allicdata Part #: | 2SK4093TZ-E-ND |
Manufacturer Part#: |
2SK4093TZ-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 250V 1A TO-92 |
More Detail: | N-Channel 250V 1A (Ta) 900mW (Ta) Through Hole TO-... |
DataSheet: | 2SK4093TZ-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 900mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 5.5nC @ 4V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.6 Ohm @ 500mA, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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2SK4093TZ-E is a silicon N-channel MOSFET (metal-oxide-semiconductor field effect transistor) used for low-noise, low-power applications and created with the intention of replacing bipolar transistors. It is constructed from a single piece of semiconductor material and contained within a single package. This type of transistor is generally very reliable, small, lightweight and consumes little power. It is commonly used in DC-power switching circuits and inverter circuits.
The 2SK4093TZ-E transistor has two applications fields: audio and video signals, and switching or ampere control circuits. As an example, it can be used as an input stage of an amplifier where it has the task of reducing any noise. Moreover, thanks to its efficient performance, it can replace bipolar transistors as it has high frequency, high input impedance and low voltage characteristics. In addition, the 2SK4093TZ-E is suitable for various power management and switching applications.
Due to the 2SK4093TZ-E\'s single N-channel MOSFET composition, it is capable of amplifying very sensitive signals. This type of transistor has three pins: a source, drain, and gate. The voltage at the gate controls the current flow through the channel between the source and drain. When the gate voltage is 0 V, the drain to source channel is completely shut off, thus no current can flow. The gate voltage can be increased, so that the drain current increases (known as Linear Region) until the gate voltage is large enough for the Drain current to reach its maximum. Saturation is the region where the drain current reaches the saturation level, implying the drain and source pins are nearly at equal potential.
The insulation resistance of the 2SK4093TZ-E is extremely high, ensuring it is not sensitive to any external conditions like temperature, radiation, or humidity. The package available is in compliance with the automotive industry requirements. Although it can be used in different types of application, it is most suitable for low voltage circuits.
The 2SK4093TZ-E is an important component in the various fields of technology, providing an efficient and reliable switching and amplification performance. Its low power consumption, its small size and compatibility with automotive industry requirements make it an ideal choice for DC-power switching circuits, inverter circuits and audio and video signal amplification.
The specific data is subject to PDF, and the above content is for reference
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