FDD6637-F085 Discrete Semiconductor Products

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FDD6637-F085 is a single high voltage N-channel enhancement-mode MOSFET with a low on-state resistance and fast switching speed. It is mainly used in AC-DC and DC-DC power applications, such as consumer electronics, telecommunication equipment, LCD monitor and panel power supply, security system and computer peripherals. It has a maximum drain-source voltage of 600V, a drain-source on-state resistance of 0.085 Ω, and a maximum drain current of 34A.

A MOSFET (metal-oxide-semiconductor field-effect transistor) is a type of field-effect transistor (FET) that is constructed with a gate-protected layer of metal, typically titanium or platinum, on the surface of the device. This gate-protected layer is known as the gate oxide, which acts as an insulating layer between the gate and the semiconductor channel.

The gate oxide provides high input capacitance, which enables the FDD6637-F085 to switch quickly. The gate oxide also enables low input-voltage operation, making it ideal for low-voltage electronic systems. The MOSFET also has an insulation layer, which isolates the gate from the source and the drain and allows greater control over the drain-source currents.

The working principle of the FDD6637-F085 is based on the idea of controlling the flow of current between the drain and the source with the assistance of a gate voltage. When a positive voltage is applied to the gate, the negative charges in the semiconductor channel are repelled, creating an inversion layer at the surface of the gate oxide. This inversion layer is called the channel region. In this state, current flows freely between the drain and the source. This is known as the on-state.

When a negative voltage is applied to the gate, the channel region disappears, blocking current from flowing between the drain and the source. This is known as the off-state. As the gate voltage increases, the channel widens and the drain-source current increases accordingly. This control of voltage to regulate the current flowing between the drain and the source is the basis of the FDD6637-F085’s working principle.

The FDD6637-F085 is mainly used in applications such as wireless telecommunication equipment, scanners, 48V power supplies, DC-DC converters, LED driver systems, and high-voltage switch-mode power supplies. It is highly suited for high-density applications and can be used in space-constrained areas due to its compact size.

The FDD6637-F085 is a reliable, fast-acting MOSFET that is suitable for high-frequency and high-voltage applications. Its low on-state resistance and fast switching speed enable it to provide excellent performance and reliable operation even in harsh conditions. It is an ideal choice for low-power and high-voltage applications.

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