Allicdata Part #: | 2SK4065-DL-1E-ND |
Manufacturer Part#: |
2SK4065-DL-1E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 75V 100A |
More Detail: | N-Channel 75V 100A (Ta) 1.65W (Ta), 90W (Tc) Surfa... |
DataSheet: | 2SK4065-DL-1E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.65W (Ta), 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12200pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 220nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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2SK4065-DL-1E is a transistor belonging to the FET (Field Effect Transistor) category, more specifically Single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) type of component, and is designed with power handling in mind. It is one of a larger family of similar transistors, and can be used in a variety of applications, such as power switching, automotive applications and even testing and measurement equipment.
The 2SK4065-DL-1E offers maximum operational and greater power efficiency. It features a built-in regeneration circuit that provides a relatively linear current and voltage characteristics, making it easier to use in digital circuits and other demanding applications. It also has low input capacitance, making it suitable for high-speed switching. Additionally, the 2SK4065-DL-1E has a very low on-state resistance and can handle high voltages – up to 700V – and large amounts of drain current, which can be used to efficiently control more power.
This transistor is capable of sustaining high temperatures with relative ease and is resilient to extreme thermal shock. With its ability to control higher amounts of energy and its wide operating temperature range, the 2SK4065-DL-1E is a great low-cost solution for power management applications where reliability is a top priority.
The working principle of the 2SK4065-DL-1E is relatively simple: it is a voltage-gated device in which the flow of current between two terminals is controlled by an applied voltage at the gate. It works similarly to a switch – when the gate voltage is low, current cannot flow through the device; when gate voltage is increased, a current channel opens between the source and the drain, allowing current to flow through it. This makes it an ideal choice for switching applications, as its response times can be very fast. Additionally, the 2SK4065-DL-1E features a built-in circuit for linear current and voltage characteristics, making it an effective solution for digital applications.
In conclusion, the 2SK4065-DL-1E is an excellent choice for a variety of applications where power management is important. It combines reliable power handling with low resistance and a wide operating temperature range, as well as a linear current and voltage characteristic, making it a great choice for demanding applications. Its low input capacitance makes it suitable for high-speed switching, making it a great solution for digital applications.
The specific data is subject to PDF, and the above content is for reference
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