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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
296-38917-2-ND	CSD25483F4	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 205 mOhm @ 500mA, 8V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.959nC @ 4.5V Vgs (Max): -12V Input Capacitance (Ciss) (Max) @ Vds: 198pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	9000 Order	--
296-47319-2-ND	CSD17484F4	Texas Instruments	View more Series: FemtoFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Rds On (Max) @ Id, Vgs: 121 mOhm @ 500mA, 8V Vgs(th) (Max) @ Id: 1.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	1000 Order	--
US5U38TR-ND	US5U38TR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT5 Package / Case: 6-SMD (5 Leads), Flat Lead	6000 Order	3000+: $0.104
1727-4167-2-ND	PSMN4R0-30YL,11 5	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 12V Power Dissipation (Max): 69W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669, 4-LFPAK	9000 Order	1500+: $0.188
DMN2046U-7DITR- ND	DMN2046U-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 292pF @ 10V Power Dissipation (Max): 760mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
NTJS4151PT1GOST R-ND	NTJS4151PT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	1000 Order	3000+: $0.0734
FDC640PTR-ND	FDC640P	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 10V Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	--
SISS02DN-T1-GE3 TR-ND	SISS02DN-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Gen IV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 51A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK 1212-8S Package / Case: PowerPAK 1212-8S	1000 Order	3000+: $0.4451
UPA2600T1R-E2-A X-ND	UPA2600T1R-E2-A X	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 19.1 mOhm @ 3.5A, 2.5V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V Power Dissipation (Max): 2.4W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-HUSON (2x2) Package / Case: 6-PowerWDFN	1000 Order	--
PHD38N02LT,118- ND	PHD38N02LT,118	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 44.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 16 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 20V Power Dissipation (Max): 57.6W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	10000+: $0.1357
IRF7811WPBFTR-N D	IRF7811WTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2335pF @ 16V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
NTMFS4839NT1G-N D	NTMFS4839NT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9.5A (Ta), 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1588pF @ 12V Power Dissipation (Max): 870mW (Ta), 41.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	1+: $0
IRF7220GTRPBFTR -ND	IRF7220GTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 14V Current - Continuous Drain (Id) @ 25C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 8075pF @ 10V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRLHM620TR2PBFC T-ND	IRLHM620TR2PBF	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 26A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 50A Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 10V Power Dissipation (Max): 2.7W (Ta), 37W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (3x3) Package / Case: 8-VQFN Exposed Pad	1000 Order	1+: $0
SI7668ADP-T1-GE 3-ND	SI7668ADP-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 8820pF @ 15V Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	--
AON7758_001-ND	AON7758_001	Alpha & Omega Semiconductor Inc.	View more Series: AlphaMOS Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 36A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.85 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V Power Dissipation (Max): 4.2W (Ta), 34W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3.3x3.3) Package / Case: 8-PowerWDFN	1000 Order	1+: $0
AO3402L-ND	AO3402L	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 55 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 4.34nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 15V Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
296-38916-2-ND	CSD25402Q3A	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1.15V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 10V Power Dissipation (Max): 2.8W (Ta), 69W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (3.3x3.3) Package / Case: 8-PowerVDFN Base Part Number: CSD25402Q3	57 Order	1+: $0.49
1727-2310-2-ND	PMV65XPEAR	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 78 mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 618pF @ 10V Power Dissipation (Max): 480mW (Ta), 6.25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	12000 Order	--
FDMS8570STR-ND	FDMS8570S	ON Semiconductor	View more Series: PowerTrench, SyncFET Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 24A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2825pF @ 13V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	1000 Order	3000+: $0.3854
SIS447DN-T1-GE3 TR-ND	SIS447DN-T1-GE3	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 10V Power Dissipation (Max): 52W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK 1212-8 Package / Case: PowerPAK 1212-8	1000 Order	--
SI1410EDH-T1-E3 TR-ND	SI1410EDH-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250A (Min) Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs (Max): 12V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	1000 Order	--
SI1413EDH-T1-GE 3TR-ND	SI1413EDH-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 100A (Min) Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs (Max): 12V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	1000 Order	1+: $0
IRF3708-ND	IRF3708	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V Power Dissipation (Max): 87W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
US6U37TR-ND	US6U37TR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	6000 Order	3000+: $0.1754
1727-4170-2-ND	PSMN7R0-30YL,11 5	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 12V Power Dissipation (Max): 51W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669, 4-LFPAK	1000 Order	1500+: $0.173
BSC010NE2LSIATM A1TR-ND	BSC010NE2LSIATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 38A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.05 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 12V Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	30000 Order	--
1727-2514-2-ND	PSMN0R7-25YLDX	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.72 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110.2nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8320pF @ 12V Power Dissipation (Max): 158W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SOT-1023, 4-LFPAK	1000 Order	--
1727-8339-2-ND	PMPB20XNEAZ	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.5A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V Power Dissipation (Max): 460mW (Ta), 12.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	9000 Order	3000+: $0.1404
PMPB10XNEAX-ND	PMPB10XNEAX	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 14 mOhm @ 9A, 4.5V Vgs(th) (Max) @ Id: 0.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2.175nF @ 10V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	1000 Order	3000+: $0.128
NVD5802NT4G-TB0 1-ND	NVD5802NT4G-TB0 1	ON Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 16.4A (Ta), 101A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 12V Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
497-3225-2-ND	STS2DPFS20V	STMicroelectronics	View more Series: STripFET II Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Rds On (Max) @ Id, Vgs: 200 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 15V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
PH4330L,115-ND	PH4330L,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 95.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2786pF @ 12V Power Dissipation (Max): 62.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669, 4-LFPAK	1000 Order	1+: $0
IRF7534D1TR-ND	IRF7534D1TR	Infineon Technologies	View more Series: FETKY Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8 Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	1000 Order	--
IRF7401PBF-ND	IRF7401PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 8.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.1A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
FDU6512A-ND	FDU6512A	ON Semiconductor	View more Series: PowerTrench Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 10.7A (Ta), 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 21 mOhm @ 10.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 10V Power Dissipation (Max): 3.8W (Ta), 43W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	--
RJU002N06FRAT10 6TR-ND	RJU002N06FRAT10 6	ROHM Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3 Package / Case: SC-70, SOT-323	1000 Order	3000+: $0.0551
1727-2704-2-ND	PMPB20XNEAX	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.5A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V Power Dissipation (Max): 460mW (Ta), 12.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	1000 Order	3000+: $0.1404
RTF025N03TLTR-N D	RTF025N03TL	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 67 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V Power Dissipation (Max): 800mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	3000 Order	--
1727-4276-2-ND	PSMN1R3-30YL,11 5	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6227pF @ 12V Power Dissipation (Max): 121W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SOT-1023, 4-LFPAK	1000 Order	1500+: $0.4871

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