SI1410EDH-T1-E3 Allicdata Electronics
Allicdata Part #:

SI1410EDH-T1-E3TR-ND

Manufacturer Part#:

SI1410EDH-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 20V 2.9A SC70-6
More Detail: N-Channel 20V 2.9A (Ta) 1W (Ta) Surface Mount SC-7...
DataSheet: SI1410EDH-T1-E3 datasheetSI1410EDH-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI1410EDH-T1-E3 is a low-voltage N-channel enhancement mode MOSFET that is specifically developed for the extremely compact and power-saving fields of switching applications. It is designed for use in space-limited applications, featuring a very small space area of only 0.43x0.43 mm in a flat TO-252 package.

The most important application fields for this device are in the areas of consumer electronics, automotive, and industrial control systems; such as circuit protection and overload relays, light switches, small appliances, and various motion control systems. Additionally, it is suitable for switching lighting loads, photovoltaic and energy storage systems, RF and microwave power amplifiers, and many more.

The SI1410EDH-T1-E3 features a typical drain current up to 5A, with a drain-source breakdown voltage of 20V and a maximum gate-source voltage of 20V. The device has very low on-resistance and offers excellent switching performance. It has a low gate capacitance of under 10pF and a fast switching speed, ensuring improved efficiency with low operating power and high frequency switching.

This device works on the principle of DC current control. This means that the transistor acts like a voltage-controlled resistor, where the voltage applied to the control gate sets the on-state resistance, allowing current to flow from the drain to the source. This voltage must be greater than the turn-on threshold voltage of the device for current to flow. The gate can then be used to reduce the current flowing through the MOSFET by reducing the gate voltage.

The SI1410EDH-T1-E3 is a very versatile device and is suitable for a wide variety of power management tasks and applications. Its small size and high efficiency make it ideal for modern compact and power-saving applications. Whether it is used as a switch or a load driver, it can withstand a large variation in voltage and can be powered from low to high currents. Its very low gate capacitance and fast switching speed make it an ideal choice for high frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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