
Allicdata Part #: | IRF7534D1TR-ND |
Manufacturer Part#: |
IRF7534D1TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 20V 4.3A MICRO8 |
More Detail: | P-Channel 20V 4.3A (Ta) 1.25W (Ta) Surface Mount M... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: | Micro8™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 1066pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 5V |
Series: | FETKY™ |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 4.3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF7534D1TR is an enhanced N-Channel Field Effect Transistor (FET) composed of an insulated gate, boot-strapped drain configuration. It is a enhancement mode pass element which is capable of providing very low, on-resistance and extremely low gate charge. This FET is primarily proposed for use in circuits demanding efficient, simple to design and layout, and low on resistance switching applications.
The IRF7534D1TR is used in areas such as consumer electronics, telecommunications, automotive, automotive electronics, medical equipment, and industrial electronics. These devices are ideal for applications needing low input capacitance, low gate charge, and low gate resistance. Common automotive applications are load switches, DC-DC converters, power supplies, solenoid drivers, and motor/inverter control. Common consumer electronics applications are DC-DC converters, power supplies, and EMI filters.
The IRF7534D1TR device consists of two main components; the "body diode" and the "gate drain." The body diode is referred to as a "floating gate." It has a voltage rating of 3.3V and a current rating of 30A. The gate drain has a voltage rating of 6V and a current rating of 30A. Both components are connected in series, with the gate drain providing the connection to ground.
The IRF7534D1TR FET can be used in various signals and linear analog circuits. Its low on resistance, low input capacitance, and low gate charge make it an ideal device for various switching and linear circuits. Low on resistance means that the IRF7534D1TR can quickly and accurately switch signals within a circuit. Low input capacitance allows it to switch circuits faster while maintaining low power consumption. Low gate charge measures the energy required to switch the FET, which is minimal.
The IRF7534D1TR utilizes the Multi-Mode Constant-Current Source (CCS) technology. This technology ensures that the "floating gate" and "gate drain" remain in their initial active state for improved performance and reduced EMI (Electro Magnetic Interference). It also helps reduce the "sluggish" response that is often seen in FETs.
The IRF7534D1TR has a "T" suffix as part of its part number. This indicates that the device\'s lead-free version complies with the RoHS III compliance guidelines. RoHS is the Restriction of Hazardous Substances directive, which restricts the hazardous substances used in electrical and electronic equipment.
In conclusion, the IRF7534D1TR is an N-channel logic level Field Effect Transistor commonly used in high current switching applications. It is used in many areas such as consumer electronics, telecommunications, automotive, automotive electronics, medical equipment, and industrial electronics. Its low on-resistance, low input capacitance, and low gate charge make it an ideal device for various switching and linear circuits. Its CCS technology ensures that it remains in an active state for improved performance and reduced EMI. The “T” suffix in its part number indicates its RoHS conformity.
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