![PSMN7R0-30YL,115 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 1727-4170-2-ND |
Manufacturer Part#: |
PSMN7R0-30YL,115 |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 76A LFPAK |
More Detail: | N-Channel 30V 76A (Tc) 51W (Tc) Surface Mount LFPA... |
DataSheet: | ![]() |
Quantity: | 1000 |
1500 +: | $ 0.17305 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 51W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1270pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 76A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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MOSFETs are extremely important electronic components that are employed across a wide range of applications and devices. This article will discuss the application and working principle of the PSMN7R0-30YL,115 MOSFET.
The PSMN7R0-30YL,115 is a single, N-channel, enhancement-mode MOSFET. This type of device uses an insulated gate to control current flow in a semi-conductor, making it suitable for a variety of applications. Due to its low on-resistance, the PSMN7R0-30YL,115 is well-suited for several types of circuits, including power amplifiers, power converters, and motor drivers.
The PSMN7R0-30YL,115 has several key features that make it useful for many applications. Firstly, it has an excellent RDS(ON) of only 1.4 mΩ. This ensures that the device can handle large currents efficiently and accurately, making it ideal for power control applications. In addition, the device has a low leakage current of 1 μA, making it suitable for low-power operations. The device also has a maximum gate-source voltage of -30 volts, making it compatible with a variety of gate-drive requirements.
The operating principle of the PSMN7R0-30YL,115 can be explained with the help of the schematic diagram shown below. In the diagram, a voltage, VGS, is applied to the gate terminal of the MOSFET. As this voltage is increased, the current from the source to drain, ID, also increases. When the applied voltage is equal to or greater than the power supply voltage, VDD, the device is said to be in the active region, and it can be used for current and voltage regulation. In the active region, the MOSFET behaves almost like a closed switch, allowing current to flow from the source to the drain.
In the case of the PSMN7R0-30YL,115, the device is specifically intended for use as a power switch in high-efficiency power circuits. The device can be used to switch loads such as motors and heaters, as well as control the flow of current in circuits such as converters and amplifiers. In addition, the device can be used in power control and energy saving circuits, as it can effectively control the flow of current with a minimal loss in power.
As the PSMN7R0-30YL,115 has a low on-resistance and a high operating voltage, it is extremely useful for a variety of applications. The device can be used for load switching and current regulation, providing a high level of efficiency and accuracy. It can also be used for energy-saving and power control applications, as it can effectively regulate the flow of current with minimal losses. Thus, the PSMN7R0-30YL,115 MOSFET is a versatile device that is suited for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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