SI1413EDH-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI1413EDH-T1-GE3TR-ND

Manufacturer Part#:

SI1413EDH-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 2.3A SC-70-6
More Detail: P-Channel 20V 2.3A (Ta) 1W (Ta) Surface Mount SC-7...
DataSheet: SI1413EDH-T1-GE3 datasheetSI1413EDH-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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A field-effect transistor (FET) is a type of transistor that uses electric fields to control the conductivity of a material. The SI1413EDH-T1-GE3 is a single pole, three throw (SP3T) FET switch. This type of FET provides a switching element with low power consumption and high linearity over the switching range. It is also suitable for use in applications with low signal distortion due to its wide bandwidth and low insertion loss.

The working principle of a FET is different from that of a bipolar junction transistor (BJT). While BJTs rely on the current flow between two terminals, FETs rely on electric fields instead. The electric field is applied to the gate terminal, which creates an electric charge at the surface of the FET. This electric charge then modulates the current through the other two terminals, allowing for a current on or off control.

The SI1413EDH-T1-GE3 FET is capable of switching between two distinct positions, known as positions “A” and “B”. It can switch from one position to another in less than 2 nanoseconds, making it suitable for high speed switching applications. It is suitable for use in automotive, industrial and consumer electronics applications. It is designed for use in systems with average power levels up to 10 Watts.

The SI1413EDH-T1-GE3 features an on-resistance of 60 ohms, which helps ensure that the signal applied to the FET is accurately transferred to the output. The maximum voltage rating of the FET is 55 V. This offers a wide range of operation voltages, making the FET suitable for various circuitry designs. The switch is also designed with a low input capacitance to reduce circuit loading and power consumption.

In addition to its switching capabilities, the SI1413EDH-T1-GE3 also features an integrated thermal protection system. This feature protects the FET from overheating and damaging the electrical components due to excessive current flow. This feature helps ensure that the FET is reliable even when used in extreme conditions.

The SI1413EDH-T1-GE3 is a versatile FET switch with excellent linearity and low power consumption. Its small size and low impedance control make it suitable for use in many applications, including automotive, industrial and consumer electronics. Its integrated thermal protection system helps to ensure reliability even in extreme conditions, making it a reliable choice for many projects.

The specific data is subject to PDF, and the above content is for reference

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