| Allicdata Part #: | SIS447DN-T1-GE3TR-ND |
| Manufacturer Part#: |
SIS447DN-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 20V 18A POWERPAK1212 |
| More Detail: | P-Channel 20V 18A (Tc) 52W (Tc) Surface Mount Powe... |
| DataSheet: |  SIS447DN-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
| Package / Case: | PowerPAK® 1212-8 |
| Supplier Device Package: | PowerPAK® 1212-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 52W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5590pF @ 10V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 181nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 7.1 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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SIS447DN-T1-GE3 is a RF and microwave high-power transistor specifically designed to deliver high performance in the frequency range from 800 MHz to 1000 MHz. The device is a GaAs based MESFET specifically developed for operation up to 500 W at a drain voltage of 30 V and drain current of 30 A. This makes it ideal for applications such as radio base transceivers and other high-power RF and microwave applications.The SIS447DN-T1-GE3 is fabricated using a MESFET process with a silicon gate oxidation, which gives it the ability to switch signals quickly. The device has a maximum power of 500 W, a wide gain range, an excellent S11 matched response, and a fast settling time with 100% modulation. It is also designed to operate under wide supply voltage and temperature conditions.The working principle of the SIS447DN-T1-GE3 is based on its use of a MESFET architecture. In this architecture, the transistor uses a gate oxide isolation layer between a source and a drain region, thus allowing the transistor to function as a variable resistance. This variable resistance is controlled by the application of a voltage to the gate of the transistor. By changing the gate voltage, the current flow at the transistor is controlled, allowing for the adjustment of the output power.The application field for a device like the SIS447DN-T1-GE3 is very broad, due to its wide frequency range, high power capacity and excellent performance in many applications. Some examples are: radio base transceivers, FM broadcast transmitters, narrowband amplifiers, multi-carrier amplifier systems, pulsed radar amplifiers, and pulse generators. The device can also be used in applications such as wireless communication, receivers, transmitters, general broadcasting, power amplifiers, as well as many others.The SIS447DN-T1-GE3 offers excellent RF performance and efficiency, making it an ideal device for high power applications. It is also cost-effective, making it an attractive solution for applications requiring high power output. In addition, it offers improved measurements such as P1dB, ENOB and settling time, making it a reliable choice for applications requiring high performance.In summary, the SIS447DN-T1-GE3 is a high-power RF and microwave transistor designed to deliver excellent performance in many RF applications. It is based on a MESFET architecture, which allows it to function as a variable resistance. This allows the device to be used in radio base transceivers, FM broadcast transmitters, and many other applications. The device also offers excellent performance with its wide frequency range, high power capacity and excellent RF performance.
The specific data is subject to PDF, and the above content is for reference
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