| Allicdata Part #: | 296-47319-2-ND |
| Manufacturer Part#: |
CSD17484F4 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Texas Instruments |
| Short Description: | MOSFET N-CH 30V 3A 3-PICOSTAR |
| More Detail: | N-Channel 30V 3A (Ta) 500mW (Ta) Surface Mount 3-P... |
| DataSheet: | CSD17484F4 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
| Package / Case: | 3-XFDFN |
| Supplier Device Package: | 3-PICOSTAR |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 500mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 195pF @ 15V |
| Vgs (Max): | 12V |
| Gate Charge (Qg) (Max) @ Vgs: | 1.2nC @ 4.5V |
| Series: | FemtoFET™ |
| Rds On (Max) @ Id, Vgs: | 121 mOhm @ 500mA, 8V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 8V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The CSD17484F4 is a single N-channel enhancement mode MOSFET integrated circuit (IC). It is suitable for applications such as battery powered low power consumption systems, low or high side switches, load changing circuits and microprocessor interface circuits. The CSD17484F4 operates over a wide temperature range and has very low on resistance. It has excellent ESD capability and protects sensitive electronics from voltage transients.
In order to use the CSD17484F4, it must be mounted onto a Printed Circuit Board (PCB). This is done by soldering the package pins to the PCB ground plane or analogous plane. The CSD17484F4 IC has eight pin connections, one of which is connected to the source and the other seven are used for the drain, gate and various other connections. The source is connected to ground and the gate is connected to the control signal source. The drain is connected to the load.
The CSD17484F4 IC consists of a polysilicon gate and silicon substrate in a 96-contact plastic body. This IC has an asymmetrical construction, which enables it to control very fast switching times. The polysilicon gate is formed on an insulating layer and acts as a barrier between the source and the drain. As a result, the drain can be isolated from the source. This is a useful feature as it allows for better control over the amount of current that passes through the device.
The CSD17484F4 IC works on the principle of enhancement-mode MOSFET. In this type of MOSFET, the device operates with a positive gate-to-source voltage. When the gate is provided with a positive voltage, the channel conductivity between source and drain increases and a current starts flowing from source to drain. This current flow is determined by the gate voltage. Thus, by controlling the gate voltage, the amount of current flowing through the MOSFET can be regulated.
The CSD17484F4 IC is suitable for use in a wide range of applications. It can be used in low power consumption systems, load-changing circuits, and microprocessor interface circuits. Due to its low on resistance and wide temperature range, it is also suitable for use in DC-DC converters, motor drives, and power amplifiers. Furthermore, its robust ESD protection makes it suitable for use in sensitive electronics that require protection from voltage transients.
The CSD17484F4 IC is an ideal choice for applications that require low on resistance and wide temperature range. Its robust ESD protection makes it suitable for applications that require reliable protection from voltage transients. Its asymmetrical construction results in very fast switching times, making it an ideal choice for applications that require fast response times.
The specific data is subject to PDF, and the above content is for reference
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CSD17484F4 Datasheet/PDF