PSMN1R3-30YL,115

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The PSMN1R3-30YL,115 is a N-Channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is part of the SiMOS III series of semiconductors offered by Infineon Technologies and is a single-gate logic level MOSFET designed to be used in different applications. The device features a 30V drain-to-source rating, a 0.30 Ohm on resistance, a gate threshold voltage of 1.3V, and a 200mA drain current. This makes it an ideal choice for applications that require low on-resistance and precise voltage threshold settings, such as motor control, HVAC, lighting control, and battery management systems.

Application Field

The PSMN1R3-30YL,115 is used in a wide range of consumer, industrial, and automotive applications. Its low on-resistance, along with its precise voltage threshold settings makes it an ideal choice for applications that require accurate output in order to achieve desired performance. Its 30V drain-to-source rating makes it suitable for controlling pumps, relays, buzzers and other actuation devices, as well as blue LED drivers and ambient illumination modules.

Working Principle

The PSMN1R3-30YL,115 is a type of MOSFET (metal oxide semiconductor field-effect transistor) that uses an electric field along a gate oxide layer to control the flow of electrons through the device. This MOSFET is built on an N-type silicon semiconductor substrate, meaning that the device is laterally controlled by the voltage applied to its gate terminal. The device features an on-resistance of 0.30 Ohms and a low drain-to-source voltage of 30V, making it perfect for applications that require precise voltage and current settings.

Like all MOSFETs, the PSMN1R3-30YL,115 works by pushing charge carriers (holes or electrons) away from the gate and onto the semiconductor substrate. This creates a depletion area near the gate, which acts as a barrier for any charge carriers trying to enter the substrate. As a result, the device can be used for switching, amplifier, or voltage regulator applications depending on the voltage level being applied to its gate terminal.

The PSMN1R3-30YL,115 can be used in applications operating in temperatures ranging from -55°C to 175°C, therefore it is suitable for use in automotive and industrial settings. Its small package size allows for its use in high-density circuits, making it an ideal choice for tight spaces.

Summary

The PSMN1R3-30YL,115 is an N-Channel Enhancement Mode MOSFET designed for a wide range of applications. It features a 30V drain-to-source rating, a 0.30 Ohm on resistance, a gate threshold voltage of 1.3V, and a 200mA drain current, making it ideal for controlling pumps, relays, buzzers, LEDs, and for ambient illumination modules. It can be used in applications operating in temperatures ranging from -55°C to 175°C and its small package size allows for its use in high-density circuits.

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