Osc prog dwn sprd 2.5v - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
EFC3J018NUZTDG- ND	EFC3J018NUZTDG	ON Semiconductor	View more Part Status: Active FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 23A (Ta) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V Power - Max: 2.5W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Supplier Device Package: 6-WLCSP (1.77x3.05)	1000 Order	5000+: $0.265
EFC6617R-A-TF-N D	EFC6617R-A-TF	ON Semiconductor	View more Series: * Part Status: Active	1000 Order	--
917-1180-2-ND	EPC2100	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	7500 Order	500+: $3.4138
917-EPC2108ENGR TR-ND	EPC2108ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100A, 2.5V @ 20A Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	2500 Order	2500+: $0.5771
BSL806NH6327XTS A1-ND	BSL806NH6327XTS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V Vgs(th) (Max) @ Id: 750mV @ 11A Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 10V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	1000 Order	--
917-1185-2-ND	EPC2105	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	10000 Order	500+: $3.5149
917-EPC2100ENG- ND	EPC2100ENG	EPC	View more Series: eGaN Packaging: Tray Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
BSD840NH6327XTS A1TR-ND	BSD840NH6327XTS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 880mA Rds On (Max) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V Vgs(th) (Max) @ Id: 750mV @ 1.6A Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Base Part Number: BSD840	30000 Order	3000+: $0.069
917-EPC2107ENGR TR-ND	EPC2107ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100A, 2.5V @ 20A Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	1000 Order	5000+: $0.5839
BSL806NL6327HTS A1TR-ND	BSL806NL6327HTS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.3A Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V Vgs(th) (Max) @ Id: 750mV @ 11A Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 10V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6 Base Part Number: BSL806	1000 Order	1+: $0
917-1169-2-ND	EPC2108	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100A, 2.5V @ 20A Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	17500 Order	2500+: $0.5771
BSD840NL6327-ND	BSD840N L6327	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 880mA Rds On (Max) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V Vgs(th) (Max) @ Id: 750mV @ 1.6A Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Base Part Number: BSD840	1000 Order	1+: $0
917-EPC2100ENGR TR-ND	EPC2100ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	6500 Order	500+: $3.4138
917-1181-2-ND	EPC2101	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	10000 Order	500+: $3.4588
917-1168-2-ND	EPC2107	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100A, 2.5V @ 20A Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	17500 Order	2500+: $0.6064
HCT802TX-ND	HCT802TX	TT Electronics/Optek Technology	View more Packaging: Bulk Part Status: Obsolete FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25C: 2A, 1.1A Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-SMD	1000 Order	1+: $0
UPA2375T1P-E1-A TR-ND	UPA2375T1P-E1-A	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Power - Max: 1.75W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFLGA Supplier Device Package: 6-EFLIP-LGA	1000 Order	1+: $0
FDMD8900TR-ND	FDMD8900	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 19A, 17A Rds On (Max) @ Id, Vgs: 4 mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2605pF @ 15V Power - Max: 2.1W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWDFN Supplier Device Package: 12-Power3.3x5	1000 Order	3000+: $0.6379
QS8J4TR-ND	QS8J4TR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4A Rds On (Max) @ Id, Vgs: 56 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Power - Max: 550mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	1000 Order	3000+: $0.281
SH8KA2GZETBTR-N D	SH8KA2GZETB	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 8A Rds On (Max) @ Id, Vgs: 28 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V Power - Max: 2.8W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	1000 Order	2500+: $0.3651
FC8V33030L-ND	FC8V33030L	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 33V Current - Continuous Drain (Id) @ 25C: 6.5A Rds On (Max) @ Id, Vgs: 20 mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 480A Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V Power - Max: 1W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: WMini8-F1	1000 Order	3000+: $0.2683
VQ3001P-E3-ND	VQ3001P-E3	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: 2 N and 2 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 850mA, 600mA Rds On (Max) @ Id, Vgs: 1 Ohm @ 1A, 12V Vgs(th) (Max) @ Id: 2.5V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ)	1000 Order	1+: $0
UPA2373T1P-E4-A -ND	UPA2373T1P-E4-A	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4V Power - Max: 1.3W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA Supplier Device Package: 4-EFLIP-LGA (1.62x1.62)	1000 Order	--
CMLDM7002AGTR-N D	CMLDM7002AG TR	Central Semiconductor Corp	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 280mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 350mW Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	1000 Order	3000+: $0.255
DMN63D1LV-13-ND	DMN63D1LV-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 550mA (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.392nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Power - Max: 940mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	1000 Order	10000+: $0.0893
QH8MA2TCRTR-ND	QH8MA2TCR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4.5A, 3A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Power - Max: 1.25W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	1000 Order	3000+: $0.1168
EFC4619R-TROSTR -ND	EFC4619R-TR	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V Power - Max: 1.6W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, FCBGA Supplier Device Package: EFCP1616-4CE-022	5000 Order	--
QS8K13TCRTR-ND	QS8K13TCR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V Power - Max: 550mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	1000 Order	3000+: $0.3418
UPA2660T1R-E2-A X-ND	UPA2660T1R-E2-A X	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4A Rds On (Max) @ Id, Vgs: 62 mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V Power - Max: 2.3W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Supplier Device Package: 6-HUSON (2x2)	1000 Order	9000+: $0.1467
VQ1001P-2-ND	VQ1001P-2	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: 4 N-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 830mA Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: 14-DIP	1000 Order	1+: $0
EFC6602R-TROSTR -ND	EFC6602R-TR	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V Power - Max: 2W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA, FCBGA Supplier Device Package: EFCP2718-6CE-020	1000 Order	--
ECH8601M-C-TL-H -ND	ECH8601M-C-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25C: 8A Rds On (Max) @ Id, Vgs: 23 mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Power - Max: 1.5W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	1000 Order	--
EFC4618R-P-TR-N D	EFC4618R-P-TR	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Gate Charge (Qg) (Max) @ Vgs: 25.4nC @ 4.5V Power - Max: 1.6W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-XBGA, 4-FCBGA Supplier Device Package: EFCP1313-4CC-037	1000 Order	--
HP8K22TBTR-ND	HP8K22TB	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 27A, 57A Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V Power - Max: 25W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	1000 Order	2500+: $0.3459
EFC3C001NUZTCG- ND	EFC3C001NUZTCG	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Power - Max: 1.6W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Supplier Device Package: 4-WLCSP (1.26x1.26)	1000 Order	5000+: $0.0842
2N7002VAC-7-ND	2N7002VAC-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 280mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250A Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 150mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	1000 Order	--
EFC8811R-TFOSTR -ND	EFC8811R-TF	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Power - Max: 2.5W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-CSP (1.77x3.54)	1000 Order	5000+: $0.1663
SH8KA4TBTR-ND	SH8KA4TB	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9A Rds On (Max) @ Id, Vgs: 21.4 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Power - Max: 3W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	7500 Order	2500+: $0.249
CMLDM7002AJTR-N D	CMLDM7002AJ TR	Central Semiconductor Corp	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 280mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 350mW Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	1000 Order	3000+: $0.2536
917-EPC2105ENG- ND	EPC2105ENG	EPC	View more Series: eGaN Packaging: Bulk Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0

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