Allicdata Part #: | 2N7002VAC-7-ND |
Manufacturer Part#: |
2N7002VAC-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 60V 0.28A SOT-563 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 280mA 150mW Su... |
DataSheet: | 2N7002VAC-7 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 280mA |
Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Power - Max: | 150mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
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The 2N7002VAC-7 is an enhancement mode enhancement menu transistor array consisting of seven N-Channel MOSFETs. This type of transistor array is commonly used in a variety of applications, including motor and relay control, power supply switching, and lamp switching. It is also used in electrostatic and piezoelectric heating applications. The 2N7002VAC-7 is an excellent choice for low-voltage power circuits with low power consumption.
The basic function of the 2N7002VAC-7 is to control the power to the load using the enhancement mode of operation of N-Channel MOSFETs. This form of transistor switching is preferred over bipolar transistors which can draw too much current at low voltages. The 2N7002VAC-7 supports both single-ended and dual-sided operation, meaning that it can be used in both pulsed and steady-state applications. This allows for a higher degree of flexibility for applications where power needs to be quickly varied or modulated.
The 2N7002VAC-7 has three operating regions - off, enhancement, and saturation. The device switches from one operating region to another by controlling the gate voltage. In the off state, the current passing through the device is zero. When the gate voltage is increased above the threshold voltage, the device enters into the enhancement region and the current passing through the device increases. If the gate voltage is further increased, the device enters into the saturation region, with its drain-source resistance reducing further. The peak current passing through the device can reach up to 10 A.
The 2N7002VAC-7 can be configured in a variety of different ways for different applications. Two configurations are commonly used - the standard configuration and the reverse configuration. In the standard configuration, the drain is connected to the lower voltage supply and the source is connected to the higher voltage supply. In the reverse configuration, the drain is connected to the higher voltage supply and the source is connected to the lower voltage supply. This allows for a greater range of current control when operating in the saturation region.
The 2N7002VAC-7 is an excellent choice for low power applications, with power consumption of only 5 mW. It is available in both standard and reverse configurations, with an operating temperature range of -55°C to +150°C. The device also has an integrated ESD protection feature, meaning it is suitable for use in sensitive electronic devices. The 2N7002VAC-7 is also available in a wide range of packages, including surface mount, SOIC, PDIP, and DIP. This makes it suitable for use in a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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