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 --2997 Item(s) In Category:Transistors - Bipolar (BJT) - Single, Pre-Biased

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Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
DTC143XSATP DTC143XSATP-ND DTC143XSATP ROHM Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: SC-72 Formed Leads
 Supplier Device Package: SPT
 Base Part Number: DTC143
1000
Order

1+:

$0

 DTC143XSATP-ND Datasheet
DTB113ESTP DTB113ESTPTB-ND DTB113ESTP ROHM Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: SC-72 Formed Leads
 Supplier Device Package: SPT
 Base Part Number: DTB113
1000
Order

1+:

$0

 DTB113ESTPTB-ND Datasheet
DTC143ZSATP DTC143ZSATP-ND DTC143ZSATP ROHM Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: SC-72 Formed Leads
 Supplier Device Package: SPT
 Base Part Number: DTC143
1000
Order

1+:

$0

 DTC143ZSATP-ND Datasheet
DTC114ESATP DTC114ESATP-ND DTC114ESATP ROHM Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: SC-72 Formed Leads
 Supplier Device Package: SPT
 Base Part Number: DTC114
1000
Order

--

 DTC114ESATP-ND Datasheet
UNR411100A UNR411100ATB-ND UNR411100A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: NS-B1
 Supplier Device Package: NS-B1
1000
Order

1+:

$0

 UNR411100ATB-ND Datasheet
UNR421D00A UNR421D00ATB-ND UNR421D00A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: NS-B1
 Supplier Device Package: NS-B1
1000
Order

1+:

$0

 UNR421D00ATB-ND Datasheet
UNR412200A UNR412200ATB-ND UNR412200A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
 Current - Collector Cutoff (Max): 1A
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: 3-SSIP
 Supplier Device Package: NS-B1
1000
Order

1+:

$0

 UNR412200ATB-ND Datasheet
UNR412300A UNR412300ATB-ND UNR412300A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
 Current - Collector Cutoff (Max): 1A
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: 3-SSIP
 Supplier Device Package: NS-B1
1000
Order

1+:

$0

 UNR412300ATB-ND Datasheet
FJNS4205RTA FJNS4205RTA-ND FJNS4205RTA ON Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 Short Body
 Supplier Device Package: TO-92S
1000
Order

1+:

$0

 FJNS4205RTA-ND Datasheet
UNR412100A UNR412100ATB-ND UNR412100A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
 Current - Collector Cutoff (Max): 1A
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: 3-SSIP
 Supplier Device Package: NS-B1
1000
Order

1+:

$0

 UNR412100ATB-ND Datasheet
FJNS4203RTA FJNS4203RTA-ND FJNS4203RTA ON Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 Short Body
 Supplier Device Package: TO-92S
1000
Order

1+:

$0

 FJNS4203RTA-ND Datasheet
UNR421100A UNR421100ATB-ND UNR421100A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: NS-B1
 Supplier Device Package: NS-B1
1000
Order

1+:

$0

 UNR421100ATB-ND Datasheet
FJNS3207RTA FJNS3207RTA-ND FJNS3207RTA ON Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 Short Body
 Supplier Device Package: TO-92S
1000
Order

1+:

$0

 FJNS3207RTA-ND Datasheet
UNR411H00A UNR411H00ATB-ND UNR411H00A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: NS-B1
 Supplier Device Package: NS-B1
1000
Order

1+:

$0

 UNR411H00ATB-ND Datasheet
UNR421200A UNR421200ATB-ND UNR421200A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: NS-B1
 Supplier Device Package: NS-B1
1000
Order

1+:

$0

 UNR421200ATB-ND Datasheet
UNR421F00A UNR421F00ATB-ND UNR421F00A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: NS-B1
 Supplier Device Package: NS-B1
1000
Order

1+:

$0

 UNR421F00ATB-ND Datasheet
UNR422200A UNR422200ATB-ND UNR422200A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
 Current - Collector Cutoff (Max): 1A
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: NS-B1
 Supplier Device Package: NS-B1
1000
Order

1+:

$0

 UNR422200ATB-ND Datasheet
FJNS3206RTA FJNS3206RTA-ND FJNS3206RTA ON Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 Short Body
 Supplier Device Package: TO-92S
1000
Order

1+:

$0

 FJNS3206RTA-ND Datasheet
UNR421900A UNR421900ATB-ND UNR421900A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: NS-B1
 Supplier Device Package: NS-B1
1000
Order

1+:

$0

 UNR421900ATB-ND Datasheet
DTB143ESTP DTB143ESTP-ND DTB143ESTP ROHM Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: SC-72 Formed Leads
 Supplier Device Package: SPT
 Base Part Number: DTB143
1000
Order

1+:

$0

 DTB143ESTP-ND Datasheet
DTA143ESATP DTA143ESATP-ND DTA143ESATP ROHM Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: SC-72 Formed Leads
 Supplier Device Package: SPT
 Base Part Number: DTA143
1000
Order

1+:

$0

 DTA143ESATP-ND Datasheet
DTA113ZSATP DTA113ZSATP-ND DTA113ZSATP ROHM Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: SC-72 Formed Leads
 Supplier Device Package: SPT
 Base Part Number: DTA113
1000
Order

1+:

$0

 DTA113ZSATP-ND Datasheet
FJNS3208RTA FJNS3208RTA-ND FJNS3208RTA ON Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 Short Body
 Supplier Device Package: TO-92S
1000
Order

1+:

$0

 FJNS3208RTA-ND Datasheet
FJNS3202RTA FJNS3202RTA-ND FJNS3202RTA ON Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 Short Body
 Supplier Device Package: TO-92S
1000
Order

1+:

$0

 FJNS3202RTA-ND Datasheet
DTA114ESATP DTA114ESATP-ND DTA114ESATP ROHM Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: SC-72 Formed Leads
 Supplier Device Package: SPT
 Base Part Number: DTA114
1000
Order

1+:

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 DTA114ESATP-ND Datasheet
DTD114ESTP DTD114ESTP-ND DTD114ESTP ROHM Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: SC-72 Formed Leads
 Supplier Device Package: SPT
 Base Part Number: DTD114
1000
Order

1+:

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 DTD114ESTP-ND Datasheet
UNR411900A UNR411900ATB-ND UNR411900A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: NS-B1
 Supplier Device Package: NS-B1
1000
Order

1+:

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 UNR411900ATB-ND Datasheet
DTB123ESTP DTB123ESTP-ND DTB123ESTP ROHM Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: SC-72 Formed Leads
 Supplier Device Package: SPT
 Base Part Number: DTB123
1000
Order

1+:

$0

 DTB123ESTP-ND Datasheet
FJNS4214RTA FJNS4214RTA-ND FJNS4214RTA ON Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 Short Body
 Supplier Device Package: TO-92S
1000
Order

1+:

$0

 FJNS4214RTA-ND Datasheet
FJNS4202RTA FJNS4202RTA-ND FJNS4202RTA ON Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 Short Body
 Supplier Device Package: TO-92S
1000
Order

1+:

$0

 FJNS4202RTA-ND Datasheet
UNR422100A UNR422100ATB-ND UNR422100A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
 Current - Collector Cutoff (Max): 1A
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: NS-B1
 Supplier Device Package: NS-B1
1000
Order

1+:

$0

 UNR422100ATB-ND Datasheet
DTB113ZSTP DTB113ZSTP-ND DTB113ZSTP ROHM Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: SC-72 Formed Leads
 Supplier Device Package: SPT
 Base Part Number: DTB113
1000
Order

1+:

$0

 DTB113ZSTP-ND Datasheet
DTC143ESATP DTC143ESATP-ND DTC143ESATP ROHM Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: SC-72 Formed Leads
 Supplier Device Package: SPT
 Base Part Number: DTC143
1000
Order

1+:

$0

 DTC143ESATP-ND Datasheet
FJNS3205RTA FJNS3205RTA-ND FJNS3205RTA ON Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 Short Body
 Supplier Device Package: TO-92S
1000
Order

1+:

$0

 FJNS3205RTA-ND Datasheet
UNR421400A UNR421400ATB-ND UNR421400A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: NS-B1
 Supplier Device Package: NS-B1
1000
Order

1+:

$0

 UNR421400ATB-ND Datasheet
FJNS3214RTA FJNS3214RTA-ND FJNS3214RTA ON Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 Short Body
 Supplier Device Package: TO-92S
1000
Order

1+:

$0

 FJNS3214RTA-ND Datasheet
FJNS4204RTA FJNS4204RTA-ND FJNS4204RTA ON Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 Short Body
 Supplier Device Package: TO-92S
1000
Order

1+:

$0

 FJNS4204RTA-ND Datasheet
FJNS4208RTA FJNS4208RTA-ND FJNS4208RTA ON Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 Short Body
 Supplier Device Package: TO-92S
1000
Order

1+:

$0

 FJNS4208RTA-ND Datasheet
DTA114WSATP DTA114WSATP-ND DTA114WSATP ROHM Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: SC-72 Formed Leads
 Supplier Device Package: SPT
 Base Part Number: DTA114
1000
Order

1+:

$0

 DTA114WSATP-ND Datasheet
UNR421L00A UNR421L00ATB-ND UNR421L00A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: NS-B1
 Supplier Device Package: NS-B1
1000
Order

1+:

$0

 UNR421L00ATB-ND Datasheet
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