UNR421L00A Allicdata Electronics
Allicdata Part #:

UNR421L00ATB-ND

Manufacturer Part#:

UNR421L00A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 300MW NS-B1
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR421L00A datasheetUNR421L00A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1
Description

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The UNR421L00A is a type of single pre-biased bipolar junction transistor (BJT), also commonly known as a BJT. A bipolar transistor is a type of transistor that uses two different types of semiconductor material, p-type and n-type, to create an active region. It is a three-terminal device, each terminal having its own special purpose. The two most common uses for BJTs are for switching and for amplification.

The UNR421L00A is an example of a pre-biased BJT, a variety which is already biased at the time of manufacture. This may be beneficial as it ensures consistent performance across devices of the same type, and it can reduce the amount of time needed to configure the transistor for operation. Pre-biased BJTs are widely used in a variety of applications, such as analog circuit design, audio amplifiers, digital signal processing, and in the production of switching power supplies.

The UNR421L00A is a three-terminal device with a collector, emitter, and base. The base is connected to a small current, which is used to activate the collector-emitter current flow. The base current is generated by a voltage source – commonly referred to as the bias voltage – which will depend on the specific application. When the base voltage is sufficiently high, a current from the collector to the emitter will flow, enabling current gain in the transistor.

In addition to its current gain, the UNR421L00A also exhibits high input impedance, which makes it well-suited for a number of different applications. Its high switching speeds are also useful in applications such as a processor or a logic device where fast switching is needed. Its high input impedance also makes the transistor particularly useful in digital circuit design, where a low voltage signal needs to be amplified with minimal distortion.

In summary, the UNR421L00A is an example of a single pre-biased BJT which is well-suited for many different applications, both analog and digital. Its pre-biased construction makes it easy to use and ensures consistent performance, while its high input impedance and fast switching speeds make it especially useful for digital signal processing, audio amplifiers and logic devices. The UNR421L00A is a versatile and reliable transistor, which makes it a popular choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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