UNR411100A Discrete Semiconductor Products |
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Allicdata Part #: | UNR411100ATB-ND |
Manufacturer Part#: |
UNR411100A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 300MW NS-B1 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR411100A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | NS-B1 |
Supplier Device Package: | NS-B1 |
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UNR411100A is a single pre-biased bipolar junction transistor (BJT) that is used for several applications and has a specific working principle. In the UNR411100A, the Base is connected to the positive power supply, and the Emitter is connected to the negative power supply. This allows for a bias voltage to be present in the transistor.
The most common application of the UNR411100A is in an audio amplifier stage. When used in an audio amplifier, the UNR411100A functions as a voltage amplifier. It converts the voltage at the base into a larger voltage at the collector, which is then amplified further by other transistors to create the audio output. This makes the UNR411100A ideal for use in audio amplifiers, as it can provide the necessary voltage gain while still having the necessary current gain required for amplifier operation.
The UNR411100A can also be used in radio frequency (RF) amplifiers. It can be used as a voltage gain stage in an RF amplifier. When used as a voltage gain stage, the UNR411100A amplifies the incoming RF signal so that it can be applied to other stages in the amplifier. This is important because it allows amplifiers to handle higher power inputs without overloading the other stages in the amplifier.
In addition to its use as an audio and RF amplifier, the UNR411100A can also be used as an oscillator or modulator. By supplying an alternating current to the base of the transistor, the collector current will begin to oscillate. This oscillation is used to create a modulated signal, such as in FM radio transmitters. This process is known as amplitude modulation.
In addition to its applications in amplifiers and oscillators, the UNR411100A can also be used in switch mode power supplies. In a switch mode power supply, the transistor is used to rapidly switch the voltage of the output in order to maintain a constant output voltage. This is achieved by the UNR411100A turning off and on rapidly, which is known as pulse width modulation.
The UNR411100A has a unique working principle. It operates by allowing current to flow from the positive power supply, through the base, and into the collector. This current is then passed through the transistor’s collector-emitter junction and eventually to the negative power supply. By controlling the amount of current flowing through the transistor, the amount of voltage present at the collector can be changed. By applying different voltages to the base, the voltage at the collector can be controlled, allowing the UNR411100A to operate as an amplifier, oscillator, modulator, or switch.
This transistor is an excellent choice for audio amplifiers, RF amplifiers, oscillators, modulators, and switch mode power supplies. Its unique working principle makes it well-suited for the tasks mentioned above, and its pre-biased configuration makes it easy to incorporate into any circuit. It is an ideal choice for those looking for a versatile and easy-to-use single pre-biased transistor.
The specific data is subject to PDF, and the above content is for reference
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