Allicdata Part #: | UNR412300ATB-ND |
Manufacturer Part#: |
UNR412300A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 300MW NS-B1 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR412300A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 100mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | 3-SSIP |
Supplier Device Package: | NS-B1 |
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The UNR412300A is a general purpose low power NPN transistor frequently used in pre biased applications. This transistor is an excellent choice when a robust and reliable solution is required.
Unlike many other transistors, the UNR412300A is pre-biased, which allows it to provide greater efficiency in applications that require a direct current power supply. With its strong current gain, it is capable of providing a steady output current even when presented with a wide range of input voltages. Additionally, the UNR412300A has an excellent power to size ratio, making it suitable for use in tight spaces and devices with limited physical space requirements.
The device operates with a voltage range of 8-30 volts, and is able to withstand up to 250 volts with short-term overloads. With its NPN configuration, the UNR412300A can handle up to 600 milliamps of collector current, and features a maximum of 2 Watts of powere-dissipation rating. Additionally, the device has a maximum VCE of -1V, an early voltage gain hFE of 1400, and a breakdown voltage of at least 6 volts.
This device has many applications in the consumer electronics and automotive industries as a switch, sound amplifier and stage amplifier. Additionally, it can also be used in other applications such as controlling the speed and voltage regulation of a motor, or controlling current flow in power supplies and LED light devices.
In regards to its operating principle, the UNR412300A is based on the basic bipolar junction transistor (BJT) principle. The device works by allowing current to flow through a semiconductor material when the base-emitter voltage is significantly higher than the base-collector voltage. In the UNR412300A, the NPN configuration gives it a single-stage gain, with maximum current flowing from the collector to the emitter when the base-emitter voltage is higher than the base-collector voltage. The total current gain of the device is dependent on the ratio of the voltages, and the pre-biased application results in greater efficiency and reliability.
The UNR412300A provides a reliable and long-lasting power solution for various device designs and applications. Its low power consumption and excellent gain characteristics make it an ideal choice in many consumer electronics and automotive applications. Its pre-biased design also provides for higher efficiency and improved device performance.
The specific data is subject to PDF, and the above content is for reference
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