UNR421900A Discrete Semiconductor Products

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The United Resistors Model UNR421900A is a general-purpose, pre-biased single bipolar junction transistor (BJT). This model was designed to be employed in various analog and digital circuits, including voltage regulators, amplifiers, switching circuits, current sources, as well as special applications such as radio and television receivers, communication equipment and much more.

The UNR421900A features an N-channel construction and features an ultra-low power consumption of only 0.09W. Additionally, the transistor has an extremely robust design, which makes it resistant to mechanical and electrical interference, allowing for long life and reliable operation.

In terms of performance, the UNR421900A has a maximum power dissipation rating of 5 Watts, a maximum collector-emitter voltage of 60V, and a maximum collector-base voltage of 60V. Additionally, the transistor can handle a maximum collector current of 100mA.

A pre-biased device is one which has been designed with the intention of reducing the amount of power needed to operate it, by taking advantage of the natural positive feedback that exists between the base and collector of a BJT. The UNR421900A is thus ideal for use in applications which require low power consumption and high reliability.

Moreover, this pre-biased transistor has a wide range of operating temperature range, from - 55°C to +150°C. This is especially useful in applications where the transistor operates in extreme conditions.

The working principle behind a pre-biased transistor is the same as that for any other BJT. A voltage is applied to the base, which causes a current to flow from the base to the collector. This current then causes a voltage drop to occur between the collector and the emitter, thereby allowing current to flow from the collector to the emitter.

In the case of the UNR421900A, the voltage applied to the base is also used to pre-bias the transistor. This voltage is slightly higher than the transistor\'s typical operating voltage which is equal to the collector-emitter saturation voltage. By pre-biasing the transistor, the collector-base voltage is kept at a constant level, preventing it from exceeding the transistor\'s breakdown voltage.

The UNR421900A is an excellent general purpose pre-biased single transistor, offering excellent reliability and power efficiency, as well as a wide operating temperature range. Its robust construction makes it suitable for a variety of applications and this makes it a popular choice among electronics enthusiasts.

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