Allicdata Part #: | UNR421F00ATB-ND |
Manufacturer Part#: |
UNR421F00A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 300MW NS-B1 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR421F00A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | NS-B1 |
Supplier Device Package: | NS-B1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
UNR421F00A is a single, pre-biased, bipolar junction transistor (BJT) intended for use in a range of applications, from relatively low-power signal and switching capabilities to a variety of enterprise-level power amplifiers. This type of transistor is designed to operate at a voltage of 50 V and a power rating of 0.5 A (50 mW).
When a current is applied to the base-emitter junction, the transistor is said to be "base-biased". Base-biasing allows the transistor to work differently from a standard BJT, as the current from the base is shared with both the emitter and collector. This sharing between the emitter and collector, referred to as "dynamic biasing", helps to reduce power consumption by allowing the transistor to operate at a lower voltage and current.
When the transistor is activated, current flows through the base-emitter junction, causing the emitter to produce a voltage across the collector-emitter junction. This causes a current to flow through the collector-emitter junction, which, in turn, causes the collector-emitter voltage to increase. This increase in voltage provides the necessary current gain to amplify the required signal.
The dynamic biasing of the UNR421F00A transistor helps to reduce power consumed by the device, as compared to a standard BJT, and also helps to control the gain of the transistor. This helps to ensure that the desired signal is amplified to its desired level, as well as to reduce any potential distortion.
The UNR421F00A can be used in a variety of applications, from low-power signal processing to high-power amplifier design. It is also suitable for use in a range of consumer products, such as television sets and car radios, which benefit from high-power amplifier design. The UNR421F00A is also used in commercial and industrial applications, such as in medical imaging devices, medical equipment, and military radar systems.
In conclusion, the UNR421F00A is a single, pre-biased, bipolar junction transistor which is used in a variety of applications. Its dynamic biasing provides the necessary current gain to amplify the desired signal and reduce power consumption, making it suitable for use in a range of applications, from low-power signal processing to high-power amplifier design. The UNR421F00A is a versatile device, suitable for use in a variety of consumer, commercial, and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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