UNR421200A Discrete Semiconductor Products

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The UNR421200A is a single, pre-biased, bipolar junction transistor (BJT) device which is well-suited for applications in many fields. This device is well known for its high gain, low noise, and accuracy. This device has been used in a variety of applications including automotive, audio, video, and medical applications. Additionally, this device has been employed in the design of low-power analog and digital circuits.

The UNR421200A is a silicon-based NPN transistor with a maximum collector current of 20mA. This device is designed to establish a current gain of at least 125. It has a minimum power dissipation of 1mW and a maximum of 30mW at a supply voltage of 25V. This device has a maximum junction temperature of 150°C and an operating temperature range of -40°C to 85°C.

The working principle of the UNR421200A is based on the bipolar junction transistor (BJT) structure. This device is essentially two diodes that are connected in series, with the middle element serving as a control element. The device works by having current flow between the base and the collector, while the base-emitter junction is forward biased. When a current flows through the base-collector junction, it controls the current flowing through the base-collector junction. This transistor’s current gain is essentially the ratio of the collector current to the base current. This device has a maximum collector current of 20mA and a minimum hFE of 125.

The UNR421200A is well-suited for applications in a wide range of fields. It has seen use in many audio, video, and medical applications. It is also capable of handling a wide range of input signals and has been successfully used to reduce noise or distorters in signal applications. The UNR421200A has also been employed in automotive applications, such as in power supplies and feedback circuits. Additionally, this device is commonly used in microcontroller-based electronics, as it provides reliable and accurate switching of signals.

In conclusion, the UNR421200A is a single, pre-biased bipolar junction transistor (BJT) device and is well-suited for applications in many fields. This device is ideal for a wide range of applications due to its high current gain and low noise. It provides excellent switching performance when used in microcontroller-based circuits and can be found in power supplies and feedback circuits in automotive applications. This device is capable of handling a wide range of input signals and is ideal for audio, video and medical applications.

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