UNR412200A Discrete Semiconductor Products |
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Allicdata Part #: | UNR412200ATB-ND |
Manufacturer Part#: |
UNR412200A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 300MW NS-B1 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR412200A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 100mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | 3-SSIP |
Supplier Device Package: | NS-B1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR412200A is a type of single, pre-biased bipolar junction transistor (BJT). This BJT is typically used in high voltage, high-side current limitation circuits. It provides extremely accurate current limitation and works with a typical operating voltage of up to 1200Vdc.
The principle of operation of the UNR412200A is based on the basic BJT structure, which consists of three terminals: emitter, base, and collector. When a voltage is applied to the base, current flows between the emitter and collector terminals and allows an amplified current to be drawn from the collector terminal. In normal operation, the base-emitter junction of the BJT is forward biased. However, the device is designed to be pre-biased, so a voltage is applied to both the base and the emitter before current flows through the device. This allows the device to perform accurate current limitation in applications that require high voltages.
The UNR412200A offers several benefits over conventional BJTs, including higher currents and lower operating voltages. It also offers a higher degree of current limiting accuracy, as well as improved isolation due to the isolation of the emitter and base terminals. These factors make the UNR412200A a good choice for high-voltage, high-side current limitation applications.
The UNR412200A is typically used in applications such as power supplies and solar power inverters. In these applications, the device is used to limit current in the event of an overload. The device can also be used in other high-side current limitation applications where extremely accurate current limitation is required. In addition, the device can provide protection against reverse current leakage in applications that involve rectifiers and other components.
In summary, the UNR412200A is a type of single, pre-biased bipolar junction transistor designed for use in high voltage, high-side current limitation applications. It provides accurate current limiting, and improved isolation between the emitter and base terminals. This makes it a good choice for applications such as power supplies and solar power inverters, where accurate current limiting is required.
The specific data is subject to PDF, and the above content is for reference
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