UNR421400A Allicdata Electronics

UNR421400A Discrete Semiconductor Products

Allicdata Part #:

UNR421400ATB-ND

Manufacturer Part#:

UNR421400A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 300MW NS-B1
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR421400A datasheetUNR421400A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1
Description

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The UNR421400A is a Single, Pre-Biased 3 Ampere, 50 Volt transistor. It is ideal for applications where high current, low operating temperature and excellent reliability are desired. It is particularly useful as a high speed switching transistor in digital circuits.

The UNR421400A has two separate leads and no additional bias is required. It is a dual collector, dual base and dual emitter type transistor. The two collectors are connected, while the two emitters are either tied together or given independent control.

The high performance design of the UNR421400A makes it suitable for high speed switching applications. It has a high current gain with a maximum of about 200 and excellent thermal stability. The high collector current and low operating temperature make it an ideal choice for applications that require high current at low temperatures. The UNR421400A also provides for increased efficiency and reliability as it dissipates very little of the input energy when operated at high speeds.

The UNR421400A\'s greatest strength lies in its versatility and flexibility. It can be used in a wide range of applications and configurations including amplifiers, inverters, drivers, control circuits, regulators and integrated circuits. It is compatible with both linear and digital circuits and can provide digital or linear outputs with or without bias. The UNR421400A can be used to construct circuits such as differential amplifiers, regulated power supplies, pulse shaping and logic control circuits.

The UNR421400A has excellent DC characteristics. The collector-to-emitter saturation voltage is 0.2V and the base-to-emitter saturation voltage is 0.7V. The high output current is up to 3 amps and the off-state leakage current is low at 6.0μA at 25°C. This makes the UNR421400A an ideal choice for power related applications or in areas where low power dissipation is required.

The UNR421400A is also suitable for high power RF and microwave applications. Its low operating temperature and excellent thermal stability make it an ideal choice in these areas. Its high switching speed, excellent current gain and extremely low leakage current also make it suitable for high frequency applications such as mobile phone transmitters and receivers.

The UNR421400A also has a wide range of applications in automotive and aerospace applications, making it an ideal choice for high current and high temperature operation. Its ability to provide both digital and linear outputs make it suitable for various applications and its high current gain makes it an excellent choice for high power applications.

The excellent overall performance of the UNR421400A makes it an ideal solution for applications such as motor control, switching, amplifiers, inverters, drivers and control circuits. Its versatile design and reliable performance make it an easy choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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