Allicdata Part #: | UNR412100ATB-ND |
Manufacturer Part#: |
UNR412100A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 300MW NS-B1 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR412100A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 100mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Through Hole |
Package / Case: | 3-SSIP |
Supplier Device Package: | NS-B1 |
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The UNR412100A is a single, pre-biased, bipolar junction transistor (BJT). It is a type of transistor that relies on the controlled manipulation of electronic current to perform switching and amplifier applications. This type of transistor is commonly used in a wide range of applications, including electronics, automotive, aerospace and military.
This particular type of transistor takes advantage of two key components: the collector, which is used to draw current away from the base, and the emitter, which is used to emit current. When the collector and emitter are connected, the current that is drawn away from the base creates a differential voltage between the two, thus allowing for operation as an amplifier or switch. The pre-biased nature of the UNR412100A makes it an ideal choice for applications that require a quick response time and/or a low input impedance.
In terms of its application field, the UNR412100A is an excellent choice for a wide range of amplifying, switching, and power management applications. Examples of these applications include digital and analog circuit design, power supply design, power factor correction and voltage regulation, audio device design and digital signal processing. The UNR412100A can be used to create switching applications that require a high current to drive a load, as well as providing protection against short-circuiting and noise. Additionally, it can be utilized in high-efficiency power designs, providing a way to boost the efficiency of a power supply circuit while maintaining current and voltage stability.
The working principle of the UNR412100A is based on its PN-junction nature. As current flows through the device, base current turns the transistor ON and OFF. This on/off action controls the flow of collector current, providing linear amplification of the input signal. Additionally, the device provides voltage gain, which is determined by the ratio of collector current to base current. The device also performs high frequency operation, allowing the device to be used in high-speed applications such as digital signal processing.
The UNR412100A is a versatile and reliable device that can be used for a variety of applications. Its highly stable characteristics make it an ideal choice for applications that require precision, accuracy, and high performance. With its pre-biased design, it provides a quick response time and low input impedance, making it well suited for digital circuit design and power management applications.
The specific data is subject to PDF, and the above content is for reference
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