UNR421100A Allicdata Electronics

UNR421100A Discrete Semiconductor Products

Allicdata Part #:

UNR421100ATB-ND

Manufacturer Part#:

UNR421100A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 300MW NS-B1
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR421100A datasheetUNR421100A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1
Description

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The UNR421100A is a pre-biased single bipolar (BJT) transistor that is ideal for applications that require a quick, efficient and durable switching solution. This type of transistor is specifically designed for high-speed switching, providing stable performance in multiple different environments.

The transistor features a fast turn-on time and low turn-off voltage, allowing for improved speed and efficiency. Additionally, the UNR421100A has a wide range of operating temperatures, from -55°C to +125°C, making it suitable for use in a variety of environments.

The UNR421100A consists of two parts: the base and the emitter. The base is connected to the emitter, forming a 4-layer structure. The emitter is the active part of the transistor, and it is where the current flows through when the circuit is switched on. The current is then passed through the base, and then to the collector, which is the output of the transistor. The collector is what connects to the load of the circuit, allowing power to be supplied to the load as needed.

In order for the UNR421100A to operate correctly, the base must be connected to ground, allowing the current to pass from the emitter to the collector. Additionally, the collector must have the correct voltage applied to it, allowing the current to flow through the circuit. This voltage is typically between 0 and plus 5 volts, depending on the desired output current.

Once these two conditions have been met, the transistor can be switched on. When the base voltage is increased to a specific value, the transistor registers this and turns on, allowing current to flow from the emitter to the collector. The current then flows out of the collector and into the load, supplying the necessary power.

Once the switch has been turned on, the current will continue to flow through the circuit until the base voltage is decreased or removed. This effectively turns the device off, and no current will flow through the circuit.

The UNR421100A is a popular choice for use in high-speed switching circuits due to its fast turn-on time, low turn-off voltage, and wide operating temperature range. Additionally, the transistor is an excellent choice for applications that require a reliable switching solution.

The specific data is subject to PDF, and the above content is for reference

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